Uncongruent laser ablation and electroless metallization of SiC

Abstract

Experimental results on the ablation of a SiC single crystal in air under irradiation with a XeCl excimer laser beam are presented. XPS analysis reveals the Si enrichment of the ablated areas under an energy density of the laser beam of 1 to 3.5 J/cm 2 and the formation of SiO x in the ablated areas. The nonstoichiometric ablation of SiC allows one to activate selectively the SiC surface for metal deposition from an electroless plating solution. Both Ni and Cu deposits show a good adherence to the SiC surface ͑up to 0.5 N/mm 2 ͒. Similar results are observed with SiC ceramics with a better adherence of the electroless metal deposit. The adherence of the deposit to the ablated SiC samples increases upon HF treatment.