1993
DOI: 10.1103/physrevlett.71.1748
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Unconventional charge gap formation in FeSi

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Cited by 344 publications
(338 citation statements)
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“…The hybridization gap is strongly reduced by many-body interactions ͑Kondo effect͒ and can range from 1 to 50 meV. In contrast to usual band gaps, the gap of a Kondo insulator is temperature-dependent, 3 and these materials become metallic at surprisingly low temperatures. The gap can also be gradually closed by large magnetic fields, yielding a metallic state for fields larger than a critical value.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…The hybridization gap is strongly reduced by many-body interactions ͑Kondo effect͒ and can range from 1 to 50 meV. In contrast to usual band gaps, the gap of a Kondo insulator is temperature-dependent, 3 and these materials become metallic at surprisingly low temperatures. The gap can also be gradually closed by large magnetic fields, yielding a metallic state for fields larger than a critical value.…”
Section: Introductionmentioning
confidence: 99%
“…7 In-gap states are also known to exist for FeSi and YbB 12 and are thought to be a common feature in all Kondo insulators. 3,14,21,22 In-gap states can be intrinsic or arise from defects. Inherent to hexaboride crystals is a boron deficiency, which plays a significant role when the cation is divalent, e.g., for the semimetal EuB 6 , the insulator CaB 6 , 23 and the semiconductor SmB 6 .…”
Section: Introductionmentioning
confidence: 99%
“…F eSi is a narrow gap semiconductor with cubic B20 structure and unusual electronic and magnetic properties [4]. F e 3 Si and F e 5 Si 3 are room-temperature ferromagnets attractive for spintronics [5,6].…”
Section: Introductionmentioning
confidence: 99%
“…Alternatively, organometallic precursors were used to fabricate F e 3 Si and F e 5 Si 3 nanoparticles by pyrolysis [6] and iron silicides by chemical vapor deposition(CVD) [11]. CVD was also employed to grow polycrystalline F eSi thin films and freestanding F eSi nanowires from the organometallic single source precursor F e(SiCl 3 ) 2 (CO) 4 [12,13].…”
Section: Introductionmentioning
confidence: 99%
“…In particular, Heuslertype Fe 2 VAl has been reported to exhibit a very unusual behaviour for an intermetallic compound, namely a semiconductor-like resistivity close to a magnetic instability [1]. This was interpreted in terms of Kondo-insulating behaviour, analogous to the system FeSi [3,4]. In contrast, optical conductivity studies provided evidence for a pseudogap in the density of states of 1 Fe 2 VAl of 0.1-0.2eV [5], a view supported by various band structure calculations [6][7][8].…”
mentioning
confidence: 99%