Uncooled detector challenges: Millimeter-wave and terahertz long channel field effect transistor and Schottky barrier diode detectors

Abstract

The model of long channel unbiased field effect transistor (FET) as mm-wave/THz detector is developed with account of some parasitic effects. The model offered is compared with the other known FET detector models and experimental data. The obtained responsivity (R) and noise equivalent power (NEP) estimations were compared with those for Schottky barrier diode (SBD) detectors. Within the framework of the model, R and NEP values for Si FETs can be determined in all inversion regions. Limits for performance of these detectors have been estimated. It has been shown that with advanced FET technology, the performance of FET mm-wave/THz detectors can be made similar to that of SBD ones or in high frequency range can surpass it. Influence of parasitic effects and detector-antenna matching on detector parameters is discussed. It has been ascertained that FETs can be preferable in some applications due to smaller parasitic effects.

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“…The usage of current-voltage characteristics allows to include into consideration also diffusion current, which is important because, as a rule, the maximum output signal of FET THz detectors is observed at G-S biases where both drift and diffusion currents should be taken into account [7].…”

“…The detectors under consideration have strong dependence NEP opt (ν) (NEP opt ~ ν m ) and responsivity ℜ ~ ν -m , where m = 2…4 [7,[10][11][12]). Majority of them can be produced at foundry level as their technology readiness level is high.…”

“…), at the moment seem to be the most sensitive within the low-frequency THz range (ν<~300 GHz) where their NEP can reach NEP ~10 -11 …4⋅10 -13 W/Hz 1/2 (see [3][4][5][6], for Refs. see also [7]) in dependence on the radiation frequency range, antenna and detector impedances, antenna-detector matching, etc. They have long been used since 1940s for microwave detection and mixing because of their relatively high sensitivity, speed and ability to operate at ambient or cryogenic temperatures.…”

Влияние Высоты Барьера Затвор-Канал На Характеристики Детектирования Полевого Транзистора В Сверхвысокочастотном И Терагерцовом Диапазонах

“…[2-5] была продемонстрирована возможность де-тектирования на кремниевом транзисторе [6,7]. Хорошо развитая кремниевая технология позволяет интегриро-вать большое число транзисторов на единой пластине, делая возможным создание матричных приемников [8,9].Теоретическое описание процесса детектирования по-левого транзистора в СВЧ и ТГц диапазонах можно найти в работах [10][11][12][13][14][15]. На низких частотах, когда емкостной ток через переход затвор−канал пренебрежи-мо мал, можно пользоваться статическими уравнениями транзистора [10].…”

“…Теоретическое описание процесса детектирования по-левого транзистора в СВЧ и ТГц диапазонах можно найти в работах [10][11][12][13][14][15]. На низких частотах, когда емкостной ток через переход затвор−канал пренебрежи-мо мал, можно пользоваться статическими уравнениями транзистора [10].…”