Uncooled infrared photodetectors in Poland

Piotrowski, J.; Piotrowski, A.

doi:10.2478/s11772-006-0006-0

Cited by 13 publications

(11 citation statements)

References 37 publications

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“…Limited amount of HgTe was then deposited by ISOVPE and the process was carried out up to complete homogenization. As the result, extremely uniform epitaxial layers were grown [15]. These layers were used for fabrication of photoconductive, photoelectromagnetic, and photovoltaic detectors operating in the middle wavelength IR (MWIR) and LWIR range at near room temperature [16][17][18][19].…”

Section: Polish Perspectivementioning

confidence: 99%

HgTe-based photodetectors in Poland

Rogalski

2009

SPIE Proceedings

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The purpose of this paper is to review the main achievements in the investigations of HgTe-based ternary alloys and point out the Polish contributions in development of the middle and long wavelength infrared photodetectors. Research and development efforts in Poland were concentrated mostly on uncooled market niche.At the beginning, a modified isothermal vapor phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic, and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapor phase deposition.At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics.In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

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Section: Polish Perspectivementioning

confidence: 99%

HgTe-based photodetectors in Poland

Rogalski

2009

SPIE Proceedings

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“…Without any doubt, the most outstanding event has been the revolution led by thermal uncooled IR detectors. Thanks to the last technological advances in this field, the dream of creating devices able to work at room temperature, close to the BLIP condition, is now a reality [18,19]. The global IR detector industry has been shaken by thermal uncooled devices.…”

Section: Uncooled Thermal Detectors a Journey Towards Affordabilitymentioning

confidence: 99%

Polycrystalline lead selenide: the resurgence of an old infrared detector

Vergara

Montojo

Torquemada

et al. 2007

Opto-Electronics Review

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The existing technology for uncooled MWIR photon detectors based on polycrystalline lead salts is stigmatized for being a 50-year-old technology. It has been traditionally relegated to single-element detectors and relatively small linear arrays due to the limitations imposed by its standard manufacture process based on a chemical bath deposition technique (CBD) developed more than 40 years ago. Recently, an innovative method for processing detectors, based on a vapour phase deposition (VPD) technique, has allowed manufacturing the first 2D array of polycrystalline PbSe with good electro optical characteristics. The new method of processing PbSe is an all silicon technology and it is compatible with standard CMOS circuitry. In addition to its affordability, VPD PbSe constitutes a perfect candidate to fill the existing gap in the photonic and uncooled IR imaging detectors sensitive to the MWIR photons. The perspectives opened are numerous and very important, converting the old PbSe detector in a serious alternative to others uncooled technologies in the low cost IR detection market. The number of potential applications is huge, some of them with high commercial impact such as personal IR imagers, enhanced vision systems for automotive applications and other not less important in the security/defence domain such as sensors for active protection systems (APS) or low cost seekers.Despite the fact, unanimously accepted, that uncooled will dominate the majority of the future IR detection applications, today, thermal detectors are the unique plausible alternative. There is plenty of room for photonic uncooled and complementary alternatives are needed. This work allocates polycrystalline PbSe in the current panorama of the uncooled IR detectors, underlining its potentiality in two areas of interest, i.e., very low cost imaging IR detectors and MWIR fast uncooled detectors for security and defence applications. The new method of processing again converts PbSe into an emerging technology.

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“…The calculations for HgCdTe photodiodes have been performed for optimal p-type doping levels equal to p = g 1/2 n i (the p-type doping is clearly advantageous for near room temperature HgCdTe detectors [101]). The experimental data for QDIPs are gathered from the literature for detectors operated at 200 and 300 K. Uncooled LWIR HgCdTe photodetectors are commercially available and manufactured in significant quantities, mostly as single-element devices [102,103]. They have found important applications in IR systems that require fast response.…”

Section: Experimental Verificationmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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Uncooled infrared photodetectors in Poland

Cited by 13 publications

References 37 publications

HgTe-based photodetectors in Poland

HgTe-based photodetectors in Poland

Polycrystalline lead selenide: the resurgence of an old infrared detector

New material systems for third generation infrared photodetectors

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