Uncooled mid-wavelength InAsSb/AlAsSb heterojunction photodetectors

Abstract

A mid-wavelength p–B–i–n infrared photodetector constituting ternary alloys of an InAs0.9Sb0.1 absorber and an AlAs0.05Sb0.95 electron barrier was demonstrated to operate at room temperature. The results of high-resolution x-ray diffraction (XRD) analysis indicate the high crystalline quality of the barriode detector structure, grown via molecular beam epitaxy, as supported by the strong XRD peak intensity of InAsSb and its corresponding defect density as low as ∼2.0 × 108 cm−2. The dark current of the barriode detector remained diffusion-limited in the 280–300 K temperature range, and generation–recombination became dominant at 220–260 K owing to the deep-level traps in the depletion region of the absorber and near the lattice-mismatched heterointerface of AlAsSb/InAsSb. Two distinct shallow traps in the InAsSb absorber were identified through Laplace deep-level transient spectroscopy with the activation energies of Et1 = 20 meV and Et2 = 46 meV. The Et1 trap is associated with the hole localization states induced by the alloy disorder of InAsSb, whereas the Et2 trap originated from a point defect of In vacancies in InAsSb. At 300 K, the barriode detector exhibited a 90% cutoff wavelength of 5.0 μm, a peak current responsivity of 0.02 A/W, and a dark current density of 1.9 × 10−3 A/cm2 under a bias voltage of −0.3 V, providing a high specific detectivity of 8.2 × 108 cm Hz1/2/W.