Uncovering the carrier dynamics of AlInGaN semiconductors using time-resolved cathodoluminescence

Abstract

The III-nitride family of semiconductors has proved essential in the design of important optoelectronic technology such as light-emitting diodes (LEDs). To improve our understanding of these materials and their devices it is important to unravel the mysteries of their carrier dynamics. Time-resolved cathodoluminescence (TRCL) is a characterisation technique wherein a pulsed electron beam is used to excite charge carriers in semiconductors. By analysis of the recorded datasets, deductions can be made about the activity of carriers in the period between their generation and recombination. The purpose of this review is to summarise work done on the use of TRCL in the understanding of III-nitride based materials and devices. The focus will be on quantum well LEDs and structural defect-related recombination.

Optical Characterization of InGaN Quantum Structures at the Nanoscale

“…A schematic diagram of the setup is shown in Figure 6. [52] When a specimen is subjected to electron beam irradiation, the interaction of primary electrons with the specimen triggers inelastic scattering processes, which subsequently generate an excess of electrons and holes. These excess carriers then recombine, emitting photons in the process-a spectacle duly captured for the purposes of imaging and spectroscopy.…”