Uncovering the Conduction Behavior of van der Waals Ambipolar Semiconductors

Wang, Feng; Tu, Bin; He, Peng; Wang, Zhenxing; Yin, Lei; Cheng, Ruiqing; Wang, Junjun; Fang, Qiaojun; He, Jun

doi:10.1002/adma.201805317

Cited by 24 publications

(24 citation statements)

References 56 publications

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“…Figure f shows the electrical transfer characteristic ( I ds – V g ) of the back-gated MoTe 2 flake with the bias voltage as V ds = 0.5 V. When the gate voltage V g sweeps from −8 to 1 V, the current of the MoTe 2 channel performs ambipolar with a negative neutral point, indicating that the MoTe 2 layer is intrinsically n-doped. It is consistent with previous reports. − At different gate voltages V g , I ds varies from minimum 0.75 nA at V g = −1.4 V to 1.6 μA at V g = 1 V, and increases as | V g | goes up. For the n-type (p-type) operation mode, the electron (hole) mobility is extracted as 29.6 (0.13) cm 2 /V·s and the on/off ratio is high as 10 3 (10).…”

Section: Resultssupporting

confidence: 93%

MoTe₂ PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector

Tian

et al. 2021

ACS Photonics

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We demonstrate a straightforward construction of MoTe2 PN homojunction on a silicon photonic crystal cavity, which promises the realizations of cavity-enhanced optoelectronic devices integrated on silicon photonic chips. The employed silicon photonic crystal cavity has an air-slot in the middle to split it into two parts, which directly function as two individual back-gate electrodes of the top-coated few-layer MoTe2. Beneficial from MoTe2’s ambipolar property, reconfigured (PN, NN, PP, NP) homojunctions are realized by controlling the gate voltages of the two separated silicon electrodes. For instance, on/off ratios exceeding 104 are obtained from the PN or NP homojunctions, and the ideality factors could approach 1.00. On the other hand, the silicon photonic crystal cavity could enhance light absorption in the coated MoTe2, promising high-performance photodetection. By coupling the resonant mode with the MoTe2 PN junction, a high photoresponsivity of 156 mA/W is obtained at the wavelength of 1353.7 nm, though it is the limit of MoTe2’s absorption bandedge. As attributes of the PN junction, the photodetector has a dark current as low as 0.14 nA and a response bandwidth exceeding 1.1 GHz. The proposed device geometry has advantages of employing silicon photonic crystal cavity as the back gates of MoTe2 PN junction directly and simultaneously to enhance light–MoTe2 interactions, which might open a new avenue to construct MoTe2-based laser diodes and electro-optic modulators on silicon photonic chips.

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Section: Resultssupporting

confidence: 93%

MoTe₂ PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector

Tian

et al. 2021

ACS Photonics

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“…In this process, with the assistance of transport agents, the raw materials were transported from the source region (high temperature) to the growth region (low temperature) to form single crystals. After the growth of m‐TMDs bulk single crystals, a series of high‐quality m‐TMDs nanosheets such as 2D MoTe 2 , [ 213 ] TaS 2 , [ 200 ] and WTe 2 [ 216 ] were obtained by followed mechanical exfoliation (see Table 4). Intriguingly, one‐step CVT growth for ultrathin m‐TMDs nanosheets was also proposed by adjusting the reaction conditions and growth kinetics.…”

Section: Synthetic Methodsmentioning

confidence: 99%

“…Chemical interaction [209] / 1T′ Nanosheet Monolayer Metal MoSe 2 Hydrothermal method [210] / 1T Nanosheet / Metal MoTe 2 CVT + ME [211] / 1T′ Single crystals / Metal CVT [212] / 1T d Single crystals / Semimetal CVT [69] / 1T′ Single crystals / Semimetal ME [213] SiO 2 /Si 1T′ Nanosheet / Metal ME [214] SiO 2 /Si 1T′ Nanosheet / Metal…”

Section: Nm Metalmentioning

confidence: 99%

2D Metallic Transition‐Metal Dichalcogenides: Structures, Synthesis, Properties, and Applications

Zhao

Shen

Zhang

et al. 2021

Adv Funct Materials

183

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2D materials and the associated heterostructures define an ideal material platform for investigating physical and chemical properties, and exhibiting new functional applications in (opto)electronic devices, electrocatalysis, and energy storage. 2D transition metal dichalcogenides (2D TMDs), as a member of the 2D materials family including 2D semiconducting TMDs (s-TMDs) and 2D metallic/semimetallic TMDs (m-TMDs) have attracted considerable attention in the scientific community. Over the past decade, the 2D s-TMDs have been extensively researched and reviewed elsewhere. Because of their distinctive physical properties including intrinsic magnetism, chargedensity-wave order and superconductivity, and potential applications, such as high-performance electronic devices, catalysis, and as metal electrode contacts, 2D m-TMDs have grabbed widespread attention in recent years. However, reviews demonstrating the m-TMDs systematically and comprehensively have been rarely reported. Here, the recent advances in 2D m-TMDs in the aspects of their unique structures, synthetic approaches, distinctive physical properties, and functional applications are highlighted. Finally, the current challenges and perspectives are discussed.

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“…P -type transfer characteristics, as discussed above, can be explained by the Schottky-barrier FET model [32], as shown in Fig. 13.…”

Section: B Ws 2 Pmisfetsmentioning

confidence: 98%

WS₂ Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO₂ Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

Hamada

Igarashi

et al. 2021

IEEE J. Electron Devices Soc.

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A layered polycrystalline WS 2 film is formed by radio-frequency (RF) magnetron sputtering and sulfur-vapor annealing (SVA). Its pMISFET is successfully demonstrated with TiN/HfO 2 top-gate stack, TiN contact, and ultra-thin body and box technologies. A WS 2 film with a (002) plane is formed parallel to a substrate surface using RF magnetron sputtering, and its crystallinity is drastically enhanced by the SVA. I-V characteristics with p-type operation are confirmed in WS 2 MISFETs with a maximum field effect mobility of 1.5 × 10 −2 cm 2 V −1 s −1 . Therefore, our film-formation method is a promising candidate for pMOSFETs in CMOS circuits.Index Terms-tungsten disulfide (WS 2 ), pMISFET, ultra-high vacuum (UHV), radio-frequency (RF) magnetron sputtering, sulfur-vapor annealing (SVA), TiN top gate, TiN contact, ultrathin body and box (UTBB).

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Uncovering the Conduction Behavior of van der Waals Ambipolar Semiconductors

Cited by 24 publications

References 56 publications

MoTe₂ PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector

MoTe₂ PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector

2D Metallic Transition‐Metal Dichalcogenides: Structures, Synthesis, Properties, and Applications

WS₂ Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO₂ Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

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Uncovering the Conduction Behavior of van der Waals Ambipolar Semiconductors

Cited by 24 publications

References 56 publications

MoTe2 PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector

MoTe2 PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector

2D Metallic Transition‐Metal Dichalcogenides: Structures, Synthesis, Properties, and Applications

WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

Contact Info

Product

Resources

About

MoTe₂ PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector

MoTe₂ PN Homojunction Constructed on a Silicon Photonic Crystal Cavity for High-Performance Photodetector

WS₂ Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO₂ Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box