Understanding and optimization of the sensitivity of nanoscale FET-based biosensors

Shoorideh, Kaveh; Chui, Chi On

doi:10.1117/12.2064899

SPIE Proceedings

2014

DOI: 10.1117/12.2064899

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Understanding and optimization of the sensitivity of nanoscale FET-based biosensors

Kaveh Shoorideh

Chi On Chui

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Cited by 2 publications

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Interface‐Engineered Field‐Effect Transistor Electronic Devices for Biosensing

Zhang,

Chen,

et al. 2023

Advanced Materials

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Promising advances in molecular medicine have promoted the urgent requirement for reliable and sensitive diagnostic tools. Electronic biosensing devices based on field‐effect transistors (FETs) exhibit a wide range of benefits, including rapid and label‐free detection, high sensitivity, easy operation, and capability of integration, possessing significant potential for application in disease screening and health monitoring. In this perspective, the tremendous efforts and achievements in the development of high‐performance FET biosensors in the past decade are summarized, with emphasis on the interface engineering of FET‐based electrical platforms for biomolecule identification. First, an overview of engineering strategies for interface modulation and recognition element design is discussed in detail. For a further step, the applications of FET‐based electrical devices for in vitro detection and real‐time monitoring in biological systems are comprehensively reviewed. Finally, the key opportunities and challenges of FET‐based electronic devices in biosensing are discussed. It is anticipated that a comprehensive understanding of interface engineering strategies in FET biosensors will inspire additional techniques for developing highly sensitive, specific, and stable FET biosensors as well as emerging designs for next‐generation biosensing electronics.

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Interface‐Engineered Field‐Effect Transistor Electronic Devices for Biosensing

Zhang,

Chen,

et al. 2023

Advanced Materials

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Nanostructured interface-engineered field-effect transistor biosensors for sensitive detection of serum miRNAs

Chen,

Lu,

Song

et al. 2024

TIMS

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<p>The efficient detection of disease-relevant biomolecules in untreated clinical samples is highly desired, especially for acute diseases. Field-effect transistor (FET) biosensors allow label-free and rapid detection of biomolecules through the measurement of their intrinsic charges. However, the sensitivity of FET biosensors would be undermined by the charge screening effect in practical biological media with high ionic strength. Here, we report the design and performance of a nanostructured interface-engineered field effect transistor (NIE FET) biosensor for highly sensitive detection of cardiovascular disease (CVD)-associated miRNAs in serum samples. Molecular dynamic simulations and electrochemical characterizations demonstrate that the nanostructured interface with concave regions alleviates the charge screening effect and enlarges the Debye length. The rationally designed NIE FET biosensor exhibits high sensitivity and reproducibility in detecting miRNA in untreated serum samples with a detection limit of pM level. Benefiting from its excellent detection capabilities, NIE FET reveals the relationship between miRNAs and CVDs and realizes the effective classification of different CVD types with the help of machine learning algorithms. The construction of NIE FET defines a robust strategy for electrical biomolecular detection in practical clinical samples.</p>

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Understanding and optimization of the sensitivity of nanoscale FET-based biosensors

Cited by 2 publications

References 8 publications

Interface‐Engineered Field‐Effect Transistor Electronic Devices for Biosensing

Interface‐Engineered Field‐Effect Transistor Electronic Devices for Biosensing

Nanostructured interface-engineered field-effect transistor biosensors for sensitive detection of serum miRNAs

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