Understanding and optimizing EBIC pn-junction characterization from modeling insights

Zhou, Ruinan; Yu, Mingzhe; Tweddle, David; Hamer, Phillip; Chen, Daniel; Hallam, Brett; Ciesla, Alison; Altermatt, Pietro P.; Wilshaw, Peter R.

doi:10.1063/1.5139894

Cited by 16 publications

(14 citation statements)

References 67 publications

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“…We speculate that a slightly higher EBIC efficiency for the planar junction is associated with the surface passivation (e.g., SiN) that decreases the surface recombination of EHPs. Detailed EBIC studies of the surface passivation based on 3D continuity equations together with Poisson equations (Yakimov 2015 ; Haney et al 2016 ; Zhou et al 2020 ) will provide additional insight on the excess carrier dynamics and general guidance to improve their device performance.…”

Section: Resultsmentioning

confidence: 99%

“…Electron beam induced current (EBIC) microscopy is a powerful analytical technique for studying local electronic states of semiconductor materials and devices (Zhou et al 2020 ; Leamy 1982 ). EBIC uses a focused electron beam to create excess carriers (i.e., electron-hole pairs) near a Schottky or a PN junction.…”

Section: Introductionmentioning

confidence: 99%

“…By fitting an EBIC profile that exponentially decays with distance from the junction, a minority carrier diffusion length can be determined (Yakimov 2015 ). Moreover, recent studies have proposed advanced EBIC simulations and numerical modeling for quantitative analysis of convoluted EBIC signals (Zhou et al 2020 ; Haney et al 2016 ).…”

Section: Introductionmentioning

confidence: 99%

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Depth-dependent EBIC microscopy of radial-junction Si micropillar arrays

Powell

Yoon

2020

Appl. Microsc.

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Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the three-dimensional (3D) structures, while effectively extracting the generated carriers via the conformal PN junction. In this paper, we report characterizations of radial PN junctions that consist of p-type Si micropillars created by deep reactive-ion etching (DRIE) and an n-type layer formed by phosphorus gas diffusion. We use electron-beam induced current (EBIC) microscopy to access the 3D junction profile from the sidewall of the pillars. Our EBIC images reveal uniform PN junctions conformally constructed on the 3D pillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimate local carrier separation/collection efficiency that reflects the quality of the PN junction. We find the EBIC efficiency of the pillar array increases with the incident electron beam energy, consistent with the EBIC behaviors observed in a high-quality planar PN junction. The magnitude of the EBIC efficiency of our pillar array is about 70% at 10 kV, slightly lower than that of the planar device (≈ 81%). We suggest that this reduction could be attributed to the unpassivated pillar surface and the unintended recombination centers in the pillar cores introduced during the DRIE processes. Our results support that the depth-dependent EBIC approach is ideally suitable for evaluating PN junctions formed on micro/nanostructured semiconductors with various geometry.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Depth-dependent EBIC microscopy of radial-junction Si micropillar arrays

Powell

Yoon

2020

Appl. Microsc.

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“…EBIC was performed across the P-N-P-N junctions of a fully built up LDNMOS (Lateral Diffused NMOS) structure [1,2]. Figure 1 illustrates a simplified cross-sectional view of an LDNMOS structure parallel to the gate poly.…”

Section: Methods 1 -Cross Sectional Ebic Analysismentioning

confidence: 99%

P-N Junction Analysis using Electron Beam Induced Current (EBIC) Technique

Sarnecki¹,

Kuan²

2021

International Symposium for Testing and Failure Analysis

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The integrity of a P-type or N-type epitaxial layer, implanted wells, or dopants (i.e. P-epi, N-well, P-imp, N-imp, etc.) oftentimes can affect the performance of an integrated circuit (IC), especially in analog/mixed signal devices. At onsemi, we had encountered a poor P-N junction of a Zener diode that caused a Cross-Coupled-Switched-Cap voltage doubler to have a lower output voltage which eventually affected the performance of the IC. The integrity of any P-N junction can be electrically verified through curve tracing with in-SEM nano-probing and fault isolation (PEM, OBIRCH, etc.) techniques. However, physical defect revelation using junction stain, either top-down or in cross section, can be challenging due to the three-dimensional (3D) form of any P-N junction. With Electron Beam Induced Current (EBIC), we can easily identify an abnormal P-N junction through both topdown and cross section. This paper is to characterize EBIC analysis on IC cross sectional view in mapping the P-N junctions and provide the information of its doping profiles. In this paper, limitation of both chemical etching and EBIC will be discussed as well as introducing the use of ion mill after FIB cross section during cross sectional EBIC sample prep as a potential method for resolution enhancement. These findings add to the understanding in using this technique and further improvement to its application in failure analysis.

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“…A portion of them are collected at the device contacts, giving rise to a photocurrent. By scanning the electron beam, a two-dimensional map of collected photocurrent in the device is constructed [18]. Figure 4(b) shows a higher-magnification EBIC top view of the monograin layer solar cell.…”

Section: Device Characterizationmentioning

confidence: 99%

Reduced recombination through CZTS/CdS interface engineering in monograin layer solar cells

Kauk-Kuusik¹,

Timmo²,

Muska³

et al. 2022

J. Phys. Energy

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The power conversion efficiency of CZTS solar cells is still limited by deep defects, low minority carrier lifetime and high recombination rates at the CZTS/CdS interface. The objective of this study was to find an effective method to reduce interface recombination of CZTS monograin layer solar cells. Two-step heterojunction formation process was applied by controlling the intermixing of Cd and Cu in the CZTS/CdS interface, which resulted in improved device efficiency up to 11.7%. Surface analysis by X-ray photoelectron spectroscopy confirmed the Cd diffusion into surface of CZTS after CdS air-annealing by forming an ultra-thin Cu2ZnxCd1-xSnS4 layer. Also, external quantum efficiency measurements showed that the absorption edge shifts to longer wavelengths with addition of Cd into CZTS surface layer. This surface modification and replacement of CdS:Cu buffer layer by fresh CdS greatly reduced the interface recombination and improved the junction quality, contributing to an enhancement of JSC ∼3 mA/cm2 (from 20.5 to 23.6 mA/cm2), and fill factor ~14% (from 59.4 to 67.7%). Serial resistance of the CZTS monograin layer solar cells was significantly reduced from 2.4 Ω cm2 to 0.67 Ω cm2. To understand in more detail the electrical behavior of highest efficiency CZTS monograin layer solar cell, the temperature dependent current–voltage characteristics were analyzed.

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Understanding and optimizing EBIC pn-junction characterization from modeling insights

Cited by 16 publications

References 67 publications

Depth-dependent EBIC microscopy of radial-junction Si micropillar arrays

Depth-dependent EBIC microscopy of radial-junction Si micropillar arrays

P-N Junction Analysis using Electron Beam Induced Current (EBIC) Technique

Reduced recombination through CZTS/CdS interface engineering in monograin layer solar cells

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