DOI: 10.17760/d20272531
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Understanding electrically active interface formation on wide bandgap semiconductors through molecular beam epitaxy using Fe₃O₄ for spintronics as a base case

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“…Electroactive surfaces and interfaces can be implemented on semiconductors with defects [675,676] associated simultaneously with phase boundaries and with quasiparticles. The latter produce electrical instabilities (both in inorganic metal oxide and organic semiconductors [677][678][679], including under optical pumping [680,681]), interphase transport and redox passivation [682,683] (reversible or irreversible, if reversible, then in some cases -oscillatory).…”
Section: Electrophysical and Electrochemical Activitymentioning
confidence: 99%
“…Electroactive surfaces and interfaces can be implemented on semiconductors with defects [675,676] associated simultaneously with phase boundaries and with quasiparticles. The latter produce electrical instabilities (both in inorganic metal oxide and organic semiconductors [677][678][679], including under optical pumping [680,681]), interphase transport and redox passivation [682,683] (reversible or irreversible, if reversible, then in some cases -oscillatory).…”
Section: Electrophysical and Electrochemical Activitymentioning
confidence: 99%