Understanding Electronic Properties and Tunable Schottky Barriers in a Graphene/Boron Selenide van der Waals Heterostructure

Abstract

van der Waals heterostructures provide a powerful platform for engineering the electronic properties and for exploring exotic physical phenomena of two-dimensional materials. Here, we construct a graphene/BSe heterostructure and examine its electronic characteristics and the tunability of contact types under electric fields. Our results reveal that the graphene/BSe heterostructure is energetically, mechanically, and thermodynamically stable at room temperature. It forms a p-type Schottky contact and exhibits a high carrier mobility, making it a promising candidate for future Schottky field-effect transistors. Furthermore, applying an electric field not only reduces contact barriers but also induces a transition from a p-type to an n-type Schottky contact and from a Schottky to an ohmic contact, offering further potential for the control and manipulation of the heterostructure's electronic properties. Our findings offer a rational basis for the design of energy-efficient and tunable heterostructure devices based on the graphene/BSe heterostructure.

Designing CMOS compatible efficient ohmic contacts to WSi2N4via surface-engineered Mo2B monolayer electrodes

“…2(e), which is in stark contrast to many heterostructures studied previously. 35,36,51–54 An external electric field is thus ineffective in driving a Schottky-to-ohmic transition in the WSi 2 N 4 /Mo 2 B contact. Nevertheless, the robustness of the SBH of WSi 2 N 4 /Mo 2 B may be beneficial for achieving a stable Schottky diode operation.…”

“…Due to the weak van der Waals (vdW) interactions and 2D/2D metal/semiconductor (MS) contact, MIGS is strongly suppressed, leading to nearly ideal contacts that approach the Schottky–Mott limit. 30 The atomic thickness of 2D metals is also beneficial in achieving MS contact with adjustable Schottky barriers 31–36 due to the weak screening effect.…”

Enhancing the electronic and optical properties of the metal/semiconductor NbS2/BSe nanoheterostructure towards advanced electronics

“… 50 It is evident that the BSe monolayer exhibits a semiconducting feature with an indirect band gap. Additionally, the BSe monolayer is considered as a promising semiconductor for forming contacts with various other 2D materials such as graphene, 51 phosphorene, 52 MoS 2 (ref. 17 ) and so forth.…”

Tunable Electronic Properties, Carrier Mobility, and Contact Characteristics in Type-II BSe/Sc2CF2 Heterostructures toward Next-Generation Optoelectronic Devices

“…BSe monolayer has been predicted to possess excellent mechanical stability and identified as a semiconductor with an indirect band gap of 2.61 eV . More interestingly, BSe monolayer demonstrates its potential as an excellent material for building van der Waals (vdW) heterostructures with other 2D materials, such as graphene, AlN, GaN, and BlueP . Additionally, it is evident that the absorption coefficient of the BSe monolayer can be enhanced up to 10 –5 cm –1 upon the construction of the vdW heterostructure .…”

“…Such a strategy involves stacking different 2D materials with vdW interactions, offering the potential for improved performance in various devices. To date, the BSe-based ,,,, and Sc 2 CF 2 -based − vdW heterostructures have been discovered and investigated both fundamentally and practically. The results reveal that the combinations between BSe or Sc 2 CF 2 monolayer with other 2D materials give rise to the emerging numerous physical phenomena that are not held in the constituent components.…”