Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Menzel, Stephan; Kaupmann, Philip; Waser, Rainer

doi:10.1039/c5nr02258d

Cited by 97 publications

(112 citation statements)

References 41 publications

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“…We do not set an artificial nucleation seed as it has been done by others "in order to save computational time". [26] At these positions Ag atoms tend to cluster. This tendency is even amplified by the fact that the electric field is enhanced by sharp edges.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, Menzel et al reported on results from two-dimensional kinetic MonteCarlo simulations which allow for several leading physical and chemical processes underlying resistive switching in electrochemical metallization cells. [26] They provide a deeper insight into the evolution of the growth and dissolution of metal filaments. However, their results are restricted to the fast (microseconds) time scale.…”

Section: Simulation Approachmentioning

confidence: 99%

“…[21,22,23,24,25,26] Particularly, the redox reactions at the electrodes are important. The related rates of oxidation of metal atoms and reduction of metal ions are assumed to be constants weighted by Arrhenius-like probabilities which depend on the local electric field and therefore on the local potential.…”

Section: Simulation Approachmentioning

confidence: 99%

See 2 more Smart Citations

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices

Dirkmann

Ziegler

Hansen

et al. 2015

Journal of Applied Physics

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In this work we report on kinetic Monte-Carlo calculations of resistive switching and the underlying growth dynamics of filaments in an electrochemical metallization device consisting of an Ag/TiO 2 /Pt sandwich-like thin film system. The developed model is not limited to i) fast time scale dynamics and ii) only one growth and dissolution cycle of metallic filaments. In particular, we present results from the simulation of consecutive cycles. We find that the numerical results are in excellent agreement with experimentally obtained data. Additionally, we observe an unexpected filament growth mode which is in contradiction to the widely acknowledged picture of filament growth, but consistent with recent experimental findings.

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Section: Resultsmentioning

confidence: 99%

Section: Simulation Approachmentioning

confidence: 99%

See 1 more Smart Citation

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices

Dirkmann

Ziegler

Hansen

et al. 2015

Journal of Applied Physics

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show abstract

“…[210][211][212][213] This is particularly relevant for filamentary switching, where electrical conduction is strongly confined at a CF. [237] [215] Copyright 2015, Royal Society of Chemistry. Electron.…”

Section: Kmc/fem Modelsmentioning

confidence: 99%

Recommended Methods to Study Resistive Switching Devices

Lanza

Wong

Pop

et al. 2018

Adv Elect Materials

524

434

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Resistive switching (RS) is an interesting property shown by some materials systems that, especially during the last decade, has gained a lot of interest for the fabrication of electronic devices, with electronic nonvolatile memories being those that have received the most attention. The presence and quality of the RS phenomenon in a materials system can be studied using different prototype cells, performing different experiments, displaying different figures of merit, and developing different computational analyses. Therefore, the real usefulness and impact of the findings presented in each study for the RS technology will be also different. This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained. The idea is to help the scientific community to evaluate the real usefulness and impact of an RS study for the development of RS technology.

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“…The observed phenomenon in our devices can be explained by electric-enhanced, redox-based ion-migration mechanism. [ 3,12,19 ] Based on the electrochemical metallization theory, in the CF growth process, the electric fi eld strength will affect the electromigration of Ag + cations, and the Ag + ionic current density can be defi ned by Mott and Gurney's Equation ( 1) [ 39 ] …”

Section: Electrical Performance Evaluationsmentioning

confidence: 99%

Amorphous‐Si‐Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window

Qian

Nguyen

Chen

et al. 2016

Adv Elect Materials

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(CFs) formation/rupture within the insulating layer leads to the resistive switching in RRAM, which can offer the possibility to scale down the memory device to less than 10 nm. [ 2,15,16,23 ] In order to activate the fresh resistive memory into switching states, the electroforming process, which usually adopts a higher voltage than the usual operation voltage, is needed to form the localized semipermanent conductive fi lament inside the active materials. [ 8,16,23 ] However, the device yield and the switching performance would be limited with high electroforming voltage which may cause permanent damage to the RRAM. [ 16,24,25 ] In addition, the integration potential of the crossbar array confi guration could also be restricted by the electroforming process. [ 26 ] On the other hand, increasing demand for high density data storage with continuous downscaling has triggered research attention towards multilevel RRAM which offers an opportunity to store more than 2-bits in a single cell. [ 27,28 ] Therefore, a large ON/OFF ratio of different resistive states is generally required to keep the stable operation of multilevel switching, [ 29,30 ] and it is also an important feature for the resistive memory to avoid misreading during the device operation.Several propositions have been developed to reduce the electroforming voltage with the improvement of the switching performances. [ 7,8,11,31,32 ] However, these methods commonly involve relatively complex fabrication process [ 8,11 ] or require high temperature for thermal annealing treatment [ 7,32 ] which may degrade the previously deposited selector or diode performance and are not suitable for stackable integration. [ 9,33 ] Furthermore, the high temperature processes are also not suitable to fabricate memory devices on the thermal instability fl exible substrates. [ 34,35 ] On the other hand, to increase the ON/OFF ratio of resistive switching memory, some methods have been developed. [ 25,29,36,37 ] For example, the ON/OFF ratio can be increased by doping boron (B) atoms into carbon nanotubes [ 29 ] or manganese (Mn) atoms into ZnO thin fi lm, [ 37 ] of which the fabrication processes are complicated and not easy to control.In order to meet the desirable requirements of (a) lowering the electroforming voltage ( V forming ) and (b) enhancing the ON/ OFF ratio, a simple approach was proposed. In this report, the Amorphous Si (a-Si) based memory devices that offer signifi cant improvement in switching performance are fabricated by inserting a gold nanoparticles (Au NPs) monolayer between the amorphous Si and inert bottom electrodes. It is demonstrated that the Au NPs-interlayer amorphous Si memory devices deliver great improvements in lowering the electroforming voltage as well as enhancing the ON/OFF ratio, as compared to a pure amorphous Si memory structure. The switching mechanism is due to the modifi ed electric fi eld distribution with the insertion of Au NPs, which can directly affect the dynamic transport of ions and lead to the change of fi lament growth. T...

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Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Cited by 97 publications

References 41 publications

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices

Recommended Methods to Study Resistive Switching Devices

Amorphous‐Si‐Based Resistive Switching Memories with Highly Reduced Electroforming Voltage and Enlarged Memory Window

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