Understanding High-Energy 75-MeV Sulfur-Ion Irradiation-Induced Degradation in GaN-Based Heterostructures: The Role of the GaN Channel Layer

Challa, Seshagiri Rao; Vega, Nahuel; Mueller, Nahuel A.; Kristukat, C.; Debray, M. E.; Witte, Hartmut; Dadgar, A.; Strittmatter, A.

doi:10.1109/ted.2020.3037259

Cited by 6 publications

(7 citation statements)

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“…We determined the non-irradiated, undoped buffer GaN layer to be n-type conductive with residual donor concentrations in the low 10 16 cm −3 range from capacitance-voltagemeasurements between gate and back contacts. Since all HEMTs investigated here shown to have nearly identical vertical IV-characteristics before irradiation, the increase in resistivity of the 10 14 ion cm −2 irradiated HEMT corresponds to changes in the transfer characteristics of the devices without and with irradiation, as reported in [14].…”

Section: Resultsmentioning

confidence: 54%

“…In our previous work, atomic displacement effects upon sulfur irradiation were already simulated using a so-called stopping and range of ions in matter (SRIM) software tool (see [14,15]). The estimated ion stopping range is 21 µm.…”

Section: Resultsmentioning

confidence: 99%

“…As we reported recently, compensation effects upon irradiation lead to highly resistive buffer layers [14]. The impact of the compensated buffer layer on the transfer characteristics of the HEMTs has been already discussed in [14].…”

Section: Introductionmentioning

confidence: 80%

“…All five dual-gate HEMTs used here were isolated against each other by the SiN x passivation layer. The HEMT structure as well as the contact formation are described in detail in [14].…”

Section: Methodsmentioning

confidence: 99%

“…The MiP features a focusing and scanning system for high-energy heavy S-ions at normal incidence allowing for a spatial resolution of about 500 × 500 µm 2 centered around the gate area of each dual gate HEMT. The whole irradiation equipment is explained in more detail in [12,14].…”

Section: Methodsmentioning

confidence: 99%

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Defect characterization of heavy-ion irradiated AlInN/GaN on Si high-electron-mobility transistors

Challa

Witte

Schmidt

et al. 2021

J. Phys. D: Appl. Phys.

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The characteristic energies of traps in InAlN/AlN/GaN high-electron mobility transistor structures on Si(111) substrates formed after irradiation with 75 MeV S-ions is studied by means of c-lattice parameter analysis, vertical IV-characteristics, micro-photoluminescence (µ-PL), photocurrent (PC) and thermally stimulated current (TSC) spectroscopy. From the lattice parameter analysis, point defect formation is concluded as the dominant source of defects upon irradiation. A strong compensation effect mani-fests itself through enhanced resistivity of the devices as found in vertical IV- measure-ments. The defect formation is detected optically by an additional PL-band within the green spectral region while defect states with threshold energies at 2.9 eV and 2.65 eV were observed by PC spectroscopy. TSC spectra exhibit two defect-related emissions between 300 K and 400 K with thermal activation energies of 0.78-0.82 eV and 0.91-0.98 eV, respectively. The data further supports the formation of Ga vacancies (VGa) and related complexes acting mainly as acceptors compensating the originally undoped n-type GaN buffer layers after irradiation.

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Section: Resultsmentioning

confidence: 54%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 80%

“…All five dual-gate HEMTs used here were isolated against each other by the SiN x passivation layer. The HEMT structure as well as the contact formation are described in detail in [14].…”

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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