Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs

Liu, Siyang; Jiang, Yifan; Sung, Woongje; Song, X.; Baliga, B. Jayant; Sun, Weifeng; Huang, Alex Q.

doi:10.4028/www.scientific.net/msf.897.501

Cited by 14 publications

(6 citation statements)

References 8 publications

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“…[4]. Moreover, supported by the off-state measurements it has been suggested that the temperature dependence of power MOSFET's ITCs is weak [5]. As shown in [6], direct measurements of the ITCs with standard equipment are possible only at low current levels (i.e.…”

Section: Introductionmentioning

confidence: 93%

Temperature Dependence of On-State Inter-Terminal Capacitances (Cgd and Cgs) of SiC MOSFETs and Frequency Limitations of their Measurements

Tsibizov

Stark

Großner

2022

MSF

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Inter-terminal capacitances (ITCs) have major influence on the dynamic performance of power SiC MOSFETs. Knowledge of the exact values for the ITCs is required in order to perform accurate and predictive compact model simulations of their dynamic performance. Since commercial SiC MOSFETs are capable of operating in a wide range of temperatures, it is important to know the values of ITCs in the whole temperature range of operation. Direct measurements of the ITCs with standard equipment is possible only at low current levels (i.e. in the off-state (Vgs < Vth) for Vds > 0 V), however their values in the on-state (Vgs>Vth) also influence the MOSFETs switching performance. In this work, ITCs of a planar SiC MOSFET in the on-state are studied by the means of a calibrated TCAD model, revealing substantial temperature dependence in the range of 300-450 K. In the first approximation, this temperature dependence of the ITCs can be explained by a weaker temperature dependence of the MOSFET channel resistance in comparison to its JFET and epitaxial layer resistances. In addition, it is shown that at high frequencies stray inductances of the TO-247-3 package result in a change of the extracted values of the on-state ITCs. This effect is already notable at 1 MHz.

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Section: Introductionmentioning

confidence: 93%

Temperature Dependence of On-State Inter-Terminal Capacitances (Cgd and Cgs) of SiC MOSFETs and Frequency Limitations of their Measurements

Tsibizov

Stark

Großner

2022

MSF

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“…5 (without considering the interface-trapped charge). With temperature increasing, the output current decreases due to a reduction in carrier mobility at higher temperature caused by the lattice scattering [32]. With increasing k value, the output current also decreases.…”

Section: A Optimization Of K Value Of the Insulation Pillarmentioning

confidence: 99%

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

Zheng¹,

Tang

Chau³

et al. 2021

IEEE J. Electron Devices Soc.

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A SiC high-k (HK) split-gate (SG) MOSFET is proposed with a Schottky barrier diode (SBD) integrated between the split gates, and is investigated by numerical TCAD simulation. Results show that it has the same breakdown voltage as the SiC high-k (HK) MOSFET with an optimized and practical k value of 30 for its insulation pillar, which results in the highest breakdown voltage (1857 V). The forward voltage (VF) and reverse recovery charge (QRR) of the device are 0.9 V and 3.49 μC/cm 2 respectively, much lower than those of the SiC HK MOSFET due to the SBD. Moreover, lower reverse transfer capacitance (CRSS), smaller gate charge (QG), and smaller gate-to-drain charge (QGD) are achieved for the proposed device because of the split-gates, leading to much lower switching power loss when compared with the SiC HK MOSFET. All these results indicate that the SiC HK SG-MOSFET has promising potential in future power electronics applications.

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“…The MOSFET switching transients have been analyzed extensively in literature, observing the impact of the stray inductances seen from the drain, source and gate terminals [7], the threshold voltage, and the MOSFET transconductance [8]. However, the individual influence of the non-linear voltagedependent drain-source capacitances C ds and drain-gate capacitance C dg is still unclear.…”

Section: Literature Surveymentioning

confidence: 99%

Analysis of parameters determining nominal dynamic performance of 1.2 kV SiC power MOSFETs

Stark¹,

Kovacevic-Badstuebner²,

Tsibizov³

et al. 2018

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD)

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A good understanding of internal MOSFET capacitances is required in order to accurately model the dynamic characteristics of SiC MOSFETs. MOSFET compact models used to simulate and optimize power converter systems have to take into account the effects of non-linear voltage-dependent internal MOSFET capacitances correctly. In this paper, the individual influence of the voltage-dependent drain-source capacitance C ds and the drain-gate capacitance C dg on the MOSFET dynamics is investigated in detail. A comprehensive analysis of the switching performance of 1.2 kV SiC power MOSFETs with respect to C ds and C dg by means of a physics-based compact model, TCAD modeling, and the switching measurements of a 1.2 kV 80 mΩ SiC power MOSFET is presented. It is demonstrated that the non-linearity of C gd impacts the turn-off delay time t d,OFF , while the non-linearity of C ds does not have a significant impact on the switching transients.

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Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs

Cited by 14 publications

References 8 publications

Temperature Dependence of On-State Inter-Terminal Capacitances (C<sub>gd</sub> and C<sub>gs</sub>) of SiC MOSFETs and Frequency Limitations of their Measurements

Temperature Dependence of On-State Inter-Terminal Capacitances (C<sub>gd</sub> and C<sub>gs</sub>) of SiC MOSFETs and Frequency Limitations of their Measurements

Simulation Study of 4H-SiC High-k Pillar MOSFET With Integrated Schottky Barrier Diode

Analysis of parameters determining nominal dynamic performance of 1.2 kV SiC power MOSFETs

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