2015
DOI: 10.1007/s11071-014-1882-3
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Understanding memristors and memcapacitors in engineering mechanics applications

Abstract: A significant event happened for electrical engineering in 2008, when researchers at HP Labs announced they had found "the missing memristor", a fourth basic circuit element that was postulated nearly four decades earlier by Dr. Leon Chua, who was also instrumental in developing the mathematical theories of memristive, memcapacitive and meminductive systems, resulting in an entire class of "mem-models" that are the foundation of the present work. By applying well-known mechanical-electrical analogies, the math… Show more

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Cited by 35 publications
(32 citation statements)
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“…Mem-models for dampers and springs are briefly introduced here, following Pei et al 31 The general mem-dashpot model, also called memristive system model, is defined as follows for a flow-controlled setting:…”
Section: Definitions For Mem-modelsmentioning
confidence: 99%
See 3 more Smart Citations
“…Mem-models for dampers and springs are briefly introduced here, following Pei et al 31 The general mem-dashpot model, also called memristive system model, is defined as follows for a flow-controlled setting:…”
Section: Definitions For Mem-modelsmentioning
confidence: 99%
“…[32][33][34] Specifically, in engineering mechanics applications, mem-models are for modeling memory effects, that is, hysteresis. For example, the use of a and p as state variables is introduced in previous studies 30,31,35 to capture history/path dependency.…”
Section: Definitions For Mem-modelsmentioning
confidence: 99%
See 2 more Smart Citations
“…As a result, the changes of magnetic flux can adjust the spatial distribution of membrane potentials of cells, here; a memristor 40 is used to realize the coupling and modulation on membrane potential from magnetic flux so that the consistency of physical dimension (or unit) can be kept. Memristor is a new electrical device composed of complex nonlinearity, and it is often used for nonlinear circuits 4143 with memory effect because the memductance is dependent on the external forcing current, the nonlinear memductance function 44,45 for memristor is described bywhere q ( φ ) is the memristor constitutive relation, the parameters α, β are often selected by appropriate values such as α  = 0.2, β  = 0.3, so that the memristor-coupled nonlinear circuit can generate chaotic state. When the effect of electromagnetic induction is considered, the dynamical equations for the three-variable Fitzhugh-Nagumo model are described by …”
Section: Model Descriptionsmentioning
confidence: 99%