Understanding of Defect Passivation Effect on Wide Band Gap p-i-n Perovskite Solar Cell

Abstract

The wide band gap perovskite solar cells (PSCs) have attracted considerable attention for their great potential as top cells in high efficiency tandem cell application. However, the photovoltaic performance and stability of PSCs are constrained by nonradiative recombination, primarily stemming from defects within the bulk and at the interface of charge transport layer/perovskite and phase segregation. In this study, we systematically investigated the effects of 2thiopheneethylammonium chloride (TEACl) on a wide band gap (∼1.67 eV) Cs 0.15 FA 0.65 MA 0.20 Pb(I 0.8 Br 0.2 ) 3 (CsFAMA) perovskite solar cell. TEACl was employed as a passivation layer between the perovskite and electron transport layer (ETL). With TEACl treatment, charged defects responsible for sub-band absorption and electrostatic potential fluctuation were effectively suppressed by the passivation of bulk defects. The incorporation of TEACl, which led to the formation of a TEA 2 PbX 4 /Perovskite (2D/3D) heterojunction, facilitated better band alignment and effective passivation of interface defects at the ETL/CsFAMA. Owing to these beneficial effects, the TEACl passivated PSC achieved a photo conversion efficiency (PCE) of 19.70% and retained ∼85% of initial PCE over ∼1900 h, surpassing the performance of the untreated PSC, which exhibited a PCE of 16.69% and retained only ∼37% of its initial PCE.