Understanding of InAs nanostructure growth by molecular beam epitaxy

Abstract

In the last decades, low-dimensional III-V nanostructures, such as nanowires and nanosheets, have drawn tremendous research interests, due to their superior electronic and optoelectronic properties, which have a lot of potential applications in nanoelectronics and optoelectronics. As an important category among III-V materials, InAs, having properties such as narrow band gap and high electron mobility, is one of the building blocks for future nanodevices. Generally speaking, most nanostructures catalyzed by metallic catalysts were found to be one-dimensional nanowires along the V 3. [3]