Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties

Moun, Monika; Kumar, Mukesh; Garg, Mansi; Pathak, Ravi; Singh, Rajendra

doi:10.1038/s41598-018-30237-8

Cited by 108 publications

(83 citation statements)

References 49 publications

(48 reference statements)

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“…Additional I ds – V ds curves at smaller bias voltages are presented in Figure S9 in the Supporting Information. The photocurrent of 2D SnO/In 2 O 3 devices increases with a decreasing illumination wavelength, due to the fact that higher excitation energy provided by higher photon energies produces more photoexcited carriers in the CB of the material system . It also seems that the heterojunction is n‐type dominating (also confirmed from Figure S10 in the Supporting Information) .…”

mentioning

confidence: 63%

2D SnO/In₂O₃ van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

Alsaif

Kuriakose

Walia

et al. 2019

Adv Materials Inter

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COMMUNICATION (1 of 8)deployed in the form of van der Waals (vdW) heterostructures that enable fascinating coupled properties from stacked individual layers of 2D sheets which can be exploited in several applications, [2,6,7] including tunneling transistors, [8] quantum hall systems, [9] electrochemical hydrogen evolution reaction, [10] optoelectronics, [4,11] and electronics. [3,12] The p-n junctions are the building blocks of the semiconductor industry, in which the p-n junction heterostructures made from ultrathin materials are of great interest in specialized electronics, optoelectronics, and photonics due to their intriguing coupled properties of the different crystals. [5][6][7]13] Several methods for exfoliation and/or deposition exist such as chemical vapor deposition (CVD), [7] pulsed laser deposition (PLD), [14] molecular beam epitaxy (MBE), [15] pick-and-lift vdW technique, [16] and mechanical exfoliation. [17] These conventional approaches are time consuming and require complicated fabrication processes, [18] yet resulting in devices with small effective areas. [19] Liquid metals are emerging materials which can be used in microfluidics components, [20] sensors, [21] electrodes, [22] phototransistors, [23] flexible and stretchable devices, [24] disease treatment, [22] biomedical field, [22] and in synthesis of low-dimensional materials. [25] Liquid metals have been shown to form a naturally occurring atomically thin layer of oxide at their interface with air, [26][27][28][29] and using liquid metal as a reaction solvent can give access to a sizable portion of oxide elements including oxides which are intrinsically nonlayered crystals. [26] The exfoliated oxides can be converted to sulfides and phosphates. [30] Combination of these atomically thin layers should provide a vast number of vdW heterostructures that are yet to be explored.In this work, atomically thin oxide skin of low melting point liquid metals of tin and indium including p-type tin oxide (SnO) [27] and n-type indium oxide (In 2 O 3 ) [31] are stacked to produce large-area heterostructures with a high degree of homogeneity. Indeed, the p-n vdW heterojunctions feature current rectification properties with exceptionally fast photoresponse times and high sensitivity for UV light. The demonstrated liquid metal synthesis framework offers the possibility of synthesizing and exploring a range of tailored heterostructures for applications in next-generation optoelectronic and photodetection devices.

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confidence: 63%

2D SnO/In₂O₃ van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

Alsaif

Kuriakose

Walia

et al. 2019

Adv Materials Inter

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“…9a,b. The measurement methodology and setup are adopted from Tong et al 59 and Monu et al 14 . To avoid topographic artifact, dual pass taping mode was employed.…”

Section: Resultsmentioning

confidence: 99%

“…This also extends the researcher's effort to develop more complex structures, like quantum-well/dot, which are difficult to grow and to operate at normal conditions. This might get worsen if a compound SC technology is involved in the processing 14 . Si/Ge/SiGe based HSs gained popularity due to their higher compatibility with Si-based technology 15 .…”

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confidence: 99%

CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures

Srivastava

Mishra

Kumar

2020

Sci Rep

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Heterostructures (HS) have always been in attraction due to their inherited properties and different important applications. integration of a phase-change material (pcM) with HS can tremendously extend the operating and application range using the "phase-tuning" of pcM for any optoelectronic devices. in the present study, we report a detailed study of electrical and optoelectronic characteristics of a p-p and p-n HS combining Ge 2 Sb 2 te 5 (GST) and Si. Reasonable 2 order of resistance switching is achieved by thermal annealing. the changes in optical properties are analysed using ellipsometry, UV-Vis-niR and Raman spectroscopy to speculate the optoelectronic behaviour of GSt/Si samples. the optical and electrical characterization were analysed with aluminium (Al), platinum (pt) and ti/ Au contacts. Appreciable rectifications varying from 500 to 1,000 at lower voltages are achieved with different contacts for both phases of GST. The change in rectification amount and current polarity are obtained with different kinds of contacts and at different incident wavelengths indicating different mechanisms of charge separation and collection. Responsivity of more than 9 A/W with < 1,000 photocurrent to dark-current ratio is demonstrated in wavelength range of 0.8-2 μm under moderate range of biasing under ~ μW source power illumination. The characteristics obtained were justified with the prediction of band alignment with the help of work-function difference measurement by Kelvinprobe force microscopy and carrier density measurement by Hall experiment. our results provide understanding to the opto-electrical behaviour of a heterojunction made of stacking PCM (GST) on Si highlighting their future use in photonic/optoelectronic-integrated circuits. Heterostructures have received intensive attentions due to their excellent intrinsic properties and wide applications ever since their emergence at very dawn of semiconductor (SC) technology in 1932 1. Heterostructures (HS), especially heterojunctions, juxtapose two different layers of materials which usually are of different materials having different properties. If the two materials are of same type (n-n or p-p) then it is called as "isotype" otherwise known as "anisotype" (e.g. n-p type) 2. Both types of the HS have their different potential applications 3. Fundamentally, instead of controlling the electrical parameters of a semiconductor by external doping and carrier injection, heterostructures can inherit different material properties of two layers e.g. controlling the charge transfer at the interface and controlling the fundamental parameters such as bandgap, effective masses, mobilities, refractive indices, etc., in the semiconductor based devices 4. Nowadays, scientists/researchers are more interested in the interactions at the junction interface to improve the performance and sometimes synergistic properties as well 5. HS are widely used as the basic building blocks in conventional devices such as photodiodes 6 , solar cells 7 , LEDs 8 , as well as in complicated struc...

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“…Heterostructures have been used for optoelectronics, nanoelectronics, photocatalysis, and various other applications to overcome the shortcomings of single or monostructure materials . Recently, graphene and transition metal dichalcogenides (TMDCs) layers were combined with GaN to develop VdWs heterostructure devices . Graphene with a zero band gap forms a Schottky junction with GaN, whereas TMDCs with a direct band gap in the visible range create p‐n and n‐n + heterojunctions .…”

Section: Introductionmentioning

confidence: 99%

Formation of Effective CuI‐GaN Heterojunction with Excellent Ultraviolet Photoresponsive Photovoltage

Ranade

Desai

Mahyavanshi

et al. 2019

Physica Status Solidi (a)

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Here, the formation of an effective heterojunction with the p‐type γ‐copper iodide (γ‐CuI) and n‐type gallium nitride (GaN) with excellent photodiode characteristics is demonstrated. The γ‐CuI/GaN heterojunction shows good rectification characteristics up to applied bias voltage of ±20 V with low saturation current, thus confirming the suitability of the γ‐CuI film. The heterojunction diode and ultraviolet (UV) photoresponsive characteristics of the device are elucidated with temperature‐dependent transport behavior analysis. With an increase in temperature, reverse saturation current is enhanced, whereas the diode ideality factor is reduced. The heterojunction device shows UV photoresponsive photovoltaic action with a prominent photovoltage of 0.93 V. The temperature‐dependent photovoltaic action is also investigated in the temperature range of 298–373 K, where the open circuit voltage (Voc) decreases with increase in temperature. The photovoltaic action is obtained at a temperature as high as 373 K, indicating that the γ‐CuI/GaN photoresponsive device is quite stable with excellent photovoltage. This study reveals that the effectiveness of γ‐CuI/GaN heterojunction and diode properties to fabricate a heterojunction photodiode with excellent photovoltage and photoresponsivity.

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Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties

Cited by 108 publications

References 49 publications

2D SnO/In₂O₃ van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

2D SnO/In₂O₃ van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures

Formation of Effective CuI‐GaN Heterojunction with Excellent Ultraviolet Photoresponsive Photovoltage

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Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties

Cited by 108 publications

References 49 publications

2D SnO/In2O3 van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

2D SnO/In2O3 van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures

Formation of Effective CuI‐GaN Heterojunction with Excellent Ultraviolet Photoresponsive Photovoltage

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2D SnO/In₂O₃ van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals

2D SnO/In₂O₃ van der Waals Heterostructure Photodetector Based on Printed Oxide Skin of Liquid Metals