Understanding switching losses in SiC MOSFET: Toward lossless switching

Li, Xuan; Zhang, Liqi; Guo, Suxuan; Yang, Lei; Huang, Alex Q.; Zhang, Chao

doi:10.1109/wipda.2015.7369295

Cited by 78 publications

(38 citation statements)

References 3 publications

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“…5, the switching voltage commutation time tested by the double pulse tester greatly depends on the operating current, and the longest switching voltage commutation time occurs during the turn-off transient under the light inductive load. If f ring is determined based on the turn-off switching voltage commutation time at the extremely light load, the required L aux will be fairly large, but the benefit that can obtained is limited since the turn-off switching loss at the light load is always almost zero [13,14]. Thus, it is wise to select a switching voltage commutation time longer than all of the turn-on commutation time and part of the turn-off commutation time so that except the turn-off time at the light load, the switching time under the rest of the operating conditions together with the switching losses under all of the operating points will not be affected by the parasitics of the inductive load.…”

Section: Design Criteria Of the Auxiliary Filtermentioning

confidence: 99%

Decoupling of interaction between WBG converter and motor load for switching performance improvement

Zhang

Wang

Tolbert

et al. 2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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High speed switching of WBG devices causes their switching behavior to be highly susceptible to the parasitics in the circuit, including inductive loads. An inductive load consisting of a motor and power cable significantly worsens the switching speed and losses of SiC MOSFETs in a PWM inverter. This paper focuses on the motor plus power cable based inductive load, and aims at mitigating its negative influence during the switching transient. An auxiliary filter is designed and inserted between the converter and inductive load so that the parasitics of the load will not be "seen" from the converter side during the switching transient. Test results with Cree 1200-V/20-A SiC MOSFETs show that the proposed auxiliary inductor enables the switching performance with a practical inductive load (e.g., motor plus cable based inductive load) to exhibit behavior close to that when the optimally-designed double pulse test load inductor is employed.

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Section: Design Criteria Of the Auxiliary Filtermentioning

confidence: 99%

Decoupling of interaction between WBG converter and motor load for switching performance improvement

Zhang

Wang

Tolbert

et al. 2016

2016 IEEE Applied Power Electronics Conference and Exposition (APEC)

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“…Hence the turn-off loss of the 15 kV SiC MOSFET can be modeled as zero. Similar situation can also happen in lower voltage SiC MOSFETs if the turn-off process is dominated by the load current determined charging of C oss of the switch, the freewheeling diode and the load parasitic capacitance [38].…”

Section: B Switching Loss Modelmentioning

confidence: 73%

15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers

et al. 2017

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Abstract-Due to much higher achievable blocking voltage and faster switching speed, power devices based on wide bandgap (WBG) silicon carbide (SiC) material are ideal for medium voltage (MV) power electronics applications. For example, a 15 kV SiC MOSFET allows a simple and efficient two-level converter configuration for a 7.2 kV solid state transformer (SST) for smart grid applications. Compared with multilevel input series and output parallel (ISOP) solution, this approach offers higher efficiency and reliability, reduced system weight and cost by operating at medium to high switching frequency. However, the main concern is how to precisely implement this device in different MV applications, achieving highest switching frequency while maintaining good thermal performance. This paper reviews the characteristics of 15 kV SiC MOSFET and offers a comprehensive guideline of implementing this device in practical MV power conversion scenarios such as AC-DC, DC-DC and AC-AC in terms of topology selection, loss optimization and thermal management.Index Terms-15 kV SiC MOSFET, efficiency, medium voltage, medium voltage power electronics, reliability, solid state transformer, smart transformer.

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“…Thus, the actual device loss must be smaller than the electrically measured loss in lab. This is also illustrated through simulation using a physically based device modelling approach in [16,17]. In such a simulation, there is possibility to measure the current shared by the MOSFET channel and the output capacitor separately.…”

Section: Calorimetric Loss Measurement In a Full-bridge Resonant Invementioning

confidence: 99%

Soft switching loss measurements of a 1.2 kV SiC MOSFET module by both electrical and calorimetric methods for high frequency applications

Tiwari

Langelid

Midtgård

et al. 2017

2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)

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This paper investigates the soft switching performance of a 1.2 kV half-bridge SiC MOSFET module, FCA150XB120 from Sanrex. The selected module has both MOSFET and diode integrated on a single chip. A single pulse control circuit is employed in a half-bridge series resonant inverter topology with a split dc-link and an LC load in order to emulate a real inverter operation. This results in a square wave output voltage and a sine wave output current where the switching is performed before the zero crossing of current (an inductive mode). In addition, a calorimetric loss measurement is carried out in a 78 kW full-bridge resonant inverter switching at about 200 kHz yielding an efficiency of 99 %. Moreover, this paper aims to find the highest possible switching frequency achievable with the selected module. Besides, the electrically measured loss is compared with the calorimetrically measured loss and the possible reasons for discrepancies are discussed.

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Understanding switching losses in SiC MOSFET: Toward lossless switching

Cited by 78 publications

References 3 publications

Decoupling of interaction between WBG converter and motor load for switching performance improvement

Decoupling of interaction between WBG converter and motor load for switching performance improvement

15 kV SiC MOSFET: An Enabling Technology for Medium Voltage Solid State Transformers

Soft switching loss measurements of a 1.2 kV SiC MOSFET module by both electrical and calorimetric methods for high frequency applications

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