Understanding the Effects of Post-Deposition Sequential Annealing on the Physical and Chemical Properties of Cu2ZnSnSe4 Thin Films

Catana, Diana-Stefania; Zaki, Mohamed Yassine; Simandan, Iosif-Daniel; Buruiana, Angel-Theodor; Sava, Florinel; Velea, Alin

doi:10.3390/surfaces6040031

Cited by 3 publications

(1 citation statement)

References 55 publications

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“…In Figure 8, are presented the diffractograms of annealed CTSe\ZnSe stacks prepared by magnetron sputtering along with the XRD patterns of the most frequent secondary phases in CZTSe films. Catana et al, synthesized in a first step CTSe films from different stacks (Sn\Cu, SnSe 2 \Cu, Sn\Cu 2 S, and SnSe 2 \Cu 2 Se), then a ZnSe layer was added on top of the obtained CTSe films and the combinations were annealed in Se atmosphere at 550 • C [69]. The identification of the ZnSe phase was almost impossible when they compared its XRD patterns to the prepared CZTSe films.…”

Section: Structural Analysis X-ray Diffractionmentioning

confidence: 99%

Recent Progress and Challenges in Controlling Secondary Phases in Kesterite CZT(S/Se) Thin Films: A Critical Review

Zaki,

Velea

2024

Energies

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Kesterite-based copper zinc tin sulfide (CZTS) and copper zinc tin selenide (CZTSe) thin films have attracted considerable attention as promising materials for sustainable and cost-effective thin-film solar cells. However, the successful integration of these materials into photovoltaic devices is hindered by the coexistence of secondary phases, which can significantly affect device performance and stability. This review article provides a comprehensive overview of recent progress and challenges in controlling secondary phases in kesterite CZTS and CZTSe thin films. Drawing from relevant studies, we discuss state-of-the-art strategies and techniques employed to mitigate the formation of secondary phases. These include a range of deposition methods, such as electrodeposition, sol-gel, spray pyrolysis, evaporation, pulsed laser deposition, and sputtering, each presenting distinct benefits in enhancing phase purity. This study highlights the importance of employing various characterization techniques, such as X-ray diffraction, Raman spectroscopy, scanning electron microscopy, and energy-dispersive X-ray spectroscopy, for the precise identification of secondary phases in CZTS and CZTSe thin films. Furthermore, the review discusses innovative strategies and techniques aimed at mitigating the occurrence of secondary phases, including process optimization, compositional tuning, and post-deposition treatments. These approaches offer promising avenues for enhancing the purity and performance of kesterite-based thin-film solar cells. Challenges and open questions in this field are addressed, and potential future research directions are proposed. By comprehensively analyzing recent advancements, this review contributes to a deeper understanding of secondary phase-related issues in kesterite CZT(S/Se) thin films, paving the way for enhanced performance and commercial viability of thin-film solar cell technologies.

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Section: Structural Analysis X-ray Diffractionmentioning

confidence: 99%

Recent Progress and Challenges in Controlling Secondary Phases in Kesterite CZT(S/Se) Thin Films: A Critical Review

Zaki,

Velea

2024

Energies

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MoS2 augmentation in CZTS solar cells: Detailed experimental and simulation analysis

Sonawane,

Gattu,

Tonpe

et al. 2024

Nano-Structures & Nano-Objects

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Optimization of CZTSe Thin Films Using Sequential Annealing in Selenium and Tin–Selenium Environments

Zaki,

Sava,

Simandan

et al. 2024

Inorg. Chem.

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Cu 2 ZnSnSe 4 (CZTSe) is a promising material for thin-film solar cells due to its suitable band gap, high absorption coefficient, and composition of earth-abundant and nontoxic elements. In this study, we prepared CZTSe thin films from Cu/SnSe 2 and ZnSe stacks using a two-step annealing process. Initially, Cu−Sn−Se (CTSe) films were synthesized by sequential deposition and annealing of Cu and SnSe 2 precursors in either a selenium (Se) or tin−selenium (Sn+Se) atmosphere. After the deposition of a ZnSe layer on top of CTSe films, the stack underwent a second annealing process, again in either a Se or Sn+Se atmosphere, resulting in four distinct annealing combinations: Se→ Se, Sn+Se→Se, Se→Sn+Se, and Sn+Se→Sn+Se. The first annealing step enabled the formation of CTSe, while the second annealing step, performed after ZnSe deposition, led to the formation of the CZTSe phase. Comprehensive characterization including grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and electrical measurements was conducted. GIXRD and Raman analysis revealed kesterite CZTSe phase peaks, with some samples showing a split in the main peak at ∼27°(2θ), indicating the presence of Cu x Se and ZnSe secondary phases. SEM analysis showed the impact of Sn and Se annealing on grain size, with larger grains observed in films annealed in Sn+Se atmospheres, particularly in the second heat treatment process. EDS results displayed consistent elemental composition across samples, with varying Cu/(Zn+Sn), Zn/Sn and Se/metal ratios influencing the band gap values from 1.09 to 1.63 eV. Hall measurements indicated p-type conductivity with carrier concentrations between 10 16 and 10 23 cm −3 . These results highlight the effectiveness of our two-step annealing process, particularly the Sn+Se atmosphere, in optimizing CZTSe thin films for potential use in high-efficiency thin-film solar cells.

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Understanding the Effects of Post-Deposition Sequential Annealing on the Physical and Chemical Properties of Cu2ZnSnSe4 Thin Films

Cited by 3 publications

References 55 publications

Recent Progress and Challenges in Controlling Secondary Phases in Kesterite CZT(S/Se) Thin Films: A Critical Review

Recent Progress and Challenges in Controlling Secondary Phases in Kesterite CZT(S/Se) Thin Films: A Critical Review

MoS2 augmentation in CZTS solar cells: Detailed experimental and simulation analysis

Optimization of CZTSe Thin Films Using Sequential Annealing in Selenium and Tin–Selenium Environments

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