Understanding the unusual photoluminescence properties of SiO x nanoropes prepared by thermal evaporation method

Sustainable eco‐friendly sub‐micron NaCl crystal powder‐assisted method to synthesize SiOx/C as anode materials originated from rice husk for lithium‐ion batteries

“…A nonstoichiometric compound might have formed between the Si O bonds, structural water may have been adsorbed in the MRH samples, and hydroxyl radical-Si bonding could have occurred. 33 The peak area proportions of hydroxyl radical, Si 4+ , and Si 3+ in the B-MRH_2nd C sample were 46.7%, 46.3%, and 7%, respectively. The area ratios of hydroxyl radical, Si 4+ , Si 3+ , and Si 2+ in the S-MRH_2nd C sample were 9.7%, 33.8%, 43.2%, and 13.3%, respectively.…”

“…B‐MRH_2nd C and S‐MRH_2nd C displayed peaks assigned to the 106 eV binding energy. A non‐stoichiometric compound might have formed between the SiO bonds, structural water may have been adsorbed in the MRH samples, and hydroxyl radical‐Si bonding could have occurred 33 . The peak area proportions of hydroxyl radical, Si 4+ , and Si 3+ in the B‐MRH_2nd C sample were 46.7%, 46.3%, and 7%, respectively.…”

Two-Dimensional Bi2O5Te Nanosheets for Sensitive and Fast Response Broadband Visible Light Photodetectors

“…A band diagram in Figure illustrates the presence of multiple defect levels within the band gap of the BOT structure, resulting in the emergence of different emission peaks. BOT, being a wide band gap semiconductor, can accommodate various defect levels between the conduction band (CB) and valence band (VB) . When excited by a 532 nm (2.33 eV) laser, the excitation primarily occurs at the defect levels rather than directly at the CB.…”

“…BOT, being a wide band gap semiconductor, can accommodate various defect levels between the conduction band (CB) and valence band (VB). 56 When excited by a 532 nm (2.33 eV) laser, the excitation primarily occurs at the defect levels rather than directly at the CB. Subsequently, various nonradiative transitions take place, leading to the total PL emission originating from the diverse defect levels spanning the visible and near-infrared (NIR) spectrum range.…”

Morphological evolution of individual microrods to self-assembled 3D hierarchical flower architectures of CuBixIn1−xSe2 for photo response applications

“…It confirms the exhibition of In valence state +3, and no significant shifting was observed. 41,42 However, both high-resolution spectra of In showed reduced intensity in CBIS-4 compared to CBIS-0, which might be due to the significant change in the stoichiometry that occurred, which led to bonding rearrangements. Similarly, the Se 3d spectrum in Fig.…”