2015
DOI: 10.12693/aphyspola.128.228
|View full text |Cite
|
Sign up to set email alerts
|

Undulator-Like Radiation and N² Effects in Semiconductor Microstructures with Grating

Abstract: In the article the cooperative N 2 -eects are considered, that is the radiation whose power is ∼ N 2 , where N is the number of emitters which in this case is equal to the number of electrons in a bunch. The suggested eects are the result of combining two eects: the Gunn-eect in GaAs and undulator-like radiation, or pumping wave acting on the electrons and which is the result of undulator eld, while the second is the backward eect of radiation which is produced by electrons moving within such microundulator. I… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Publication Types

Select...

Relationship

0
0

Authors

Journals

citations
Cited by 0 publications
references
References 6 publications
0
0
0
Order By: Relevance

No citations

Set email alert for when this publication receives citations?