Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires

Yuan, Xiaoming; Li, Lin; Li, Ziyuan; Wang, Fan; Wang, Naiyin; Fu, Lan; He, Jun; Tan, Hark Hoe; Jagadish, Chennupati

doi:10.1039/c9nr01213c

Cited by 19 publications

(11 citation statements)

References 57 publications

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“…The carrier mobility and photoresponsivity could be further enhanced by addition of an Al 2 O 3 or HfO 2 passivation layer that can suppress the negative influence of surface defect states and atmospheric molecules [11]. Yuan et al showed that nanowire photodetector responsivity can also be enhanced using in situ passivation by epitaxial growth of a GaInP shell on GaAs core nanowires [75], whereas Li et al demonstrated enhanced infrared photoresponse of GaAsSb nanowires by the in situ passivation of adding an InP shell [76]. Moreover, core-shell heterostructures, such as InAs/AlSb core-shell [46], form a type-II bandgap alignment that further improves charge carrier separation, photosensivity, and photoresponse.…”

Section: Photoconductorsmentioning

confidence: 99%

“…Due to the morphology and associated properties of the nanowires, the performance of these photodetectors could be tuned by adjusting the Schottky barrier height, which is sensitive to the carrier generation and transport [88]. As the photocurrent is normally localized near the metal electrode-nanowire contact, scanning photocurrent mapping can be an effective way to investigate the effects of Schottky barriers on the mechanisms of photoconduction [32,75,89]. Compared to the M-S structure-based Schottky barrier photodiode that can produce photocurrent at zero bias with a gain no more than 1 but very fast response time [32], the M-S-M structure is symmetrical at zero bias with a built-in potential well for photoexcited carriers until a high external voltage is applied to break through the potential barrier.…”

Section: Junction Based Photodetectorsmentioning

confidence: 99%

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Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Allen

et al. 2020

Materials

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Recently, III-V semiconductor nanowires have been widely explored as promising candidates for high-performance photodetectors due to their one-dimensional morphology, direct and tunable bandgap, as well as unique optical and electrical properties. Here, the recent development of III-V semiconductor-based single nanowire photodetectors for infrared photodetection is reviewed and compared, including material synthesis, representative types (under different operation principles and novel concepts), and device performance, as well as their challenges and future perspectives.

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Section: Photoconductorsmentioning

confidence: 99%

Section: Junction Based Photodetectorsmentioning

confidence: 99%

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Allen

et al. 2020

Materials

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“…[ 55 ] Recombination can occur between electrons and holes trapped in neighboring ZB/WZ segments of a NW, termed as type II recombination. [ 56,57 ] The lower recombination rates of the spatially separated charge carriers lead to a fast decrease in PL intensity at early times due to the trapping of free carriers, but also to a slower (i.e., nonexponential) subsequent decay of the PL signal, as observed in the measured TRPL decays.…”

Section: Resultsmentioning

confidence: 85%

Comparison of Triethylgallium and Trimethylgallium Precursors for GaInP Nanowire Growth

Alcer

Saxena

Hrachowina

et al. 2020

Physica Status Solidi (b)

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Nanowire (NW) arrays containing a top segment of GaxIn1–xP are investigated, comparing NWs grown using two different Ga precursors, trimethylgallium (TMGa) and triethylgallium (TEGa). TMGa is the precursor commonly used for the particle‐assisted vapor–liquid–solid (VLS) growth of GaxIn1–xP NWs. However, it shows inefficient pyrolysis at typical NW growth conditions. The use of the alternative precursor TEGa is investigated by making a direct comparison between NWs grown using TEGa and TMGa at otherwise identical growth conditions. Growth rates, resulting NW materials composition, and time‐resolved photoluminescence (TRPL) lifetimes are investigated. With increasing Ga content of the NWs, the TRPL lifetimes decrease, indicating trap states that are associated with GaP. Somewhat longer TRPL lifetimes for the samples grown using TEGa indicate a lower concentration of deep trap states. For doped NWs, it is found that the strong effect of the p‐type dopant diethylzinc (DEZn) on the NW composition, observed for GaxIn1–xP NWs grown using TMGa, is absent when using TEGa.

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“…[42] WZ/ZB homojunction has been intensively investigated in III-V nanowires, in which they exhibit type-II band alignment and have a great significance in different applications. [45][46][47][48] Here, we expand the WZ/ZB homojunction structure from 1D nanowires to 2D nanomembranes, which can potentially provide additional functionality such as separation of charge carriers to the respective nanomembrane layer for high speed devices.…”

Section: Resultsmentioning

confidence: 99%

Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy

Wang

Wong

Yuan

et al. 2021

Small

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There is a strong demand for III–V nanostructures of different geometries and in the form of interconnected networks for quantum science applications. This can be achieved by selective area epitaxy (SAE) but the understanding of crystal growth in these complicated geometries is still insufficient to engineer the desired shape. Here, the shape evolution and crystal structure of InP nanostructures grown by SAE on InP substrates of different orientations are investigated and a unified understanding to explain these observations is established. A strong correlation between growth direction and crystal phase is revealed. Wurtzite (WZ) and zinc‐blende (ZB) phases form along <111>A and <111>B directions, respectively, while crystal phase remains the same along other low‐index directions. The polarity induced crystal structure difference is explained by thermodynamic difference between the WZ and ZB phase nuclei on different planes. Growth from the openings is essentially determined by pattern confinement and minimization of the total surface energy, regardless of substrate orientations. A novel type‐II WZ/ZB nanomembrane homojunction array is obtained by tailoring growth directions through alignment of the openings along certain crystallographic orientations. The understanding in this work lays the foundation for the design and fabrication of advanced III–V semiconductor devices based on complex geometrical nanostructures.

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Unexpected benefits of stacking faults on the electronic structure and optical emission in wurtzite GaAs/GaInP core/shell nanowires

Abstract: Superior passivation of GaInP shell and the revealed carrier dynamics in WZ polytype GaAs nanowires.

Cited by 19 publications

References 57 publications

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Comparison of Triethylgallium and Trimethylgallium Precursors for GaInP Nanowire Growth

Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy

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