Unexpected large room-temperature ferromagnetism in porous Cu2O thin films

Au-Mediated Charge Transfer Process of Ternary Cu2O/Au/TiO2-NAs Nanoheterostructures for Improved Photoelectrochemical Performance

“…2.3 eV), as above proven in Figure b. For the specimens of Cu 2 O/TiO 2 -NAs and Cu 2 O/Au/TiO 2 -NAs 80s, as seen in Figure a,d, there are three transient PL peaks, centering at 430, 535, and 675 nm, which originated from the shallow-trapping recombinative PL of single and doubly ionized OV defects in TiO 2 -NAs and Cu vacancies (Cu v ) acceptor level in Cu 2 O, respectively. Simultaneously, as illustrated in Figure b,c, besides transient PL peaks at 430 and 675 nm stated above, the fresh emerging PL peaks are located at 570 nm (ca.…”

Significant room-temperature ferromagnetism in porous ZnO films: The role of oxygen vacancies

“…It is believed that the oxygen vacancies and defects play a major role in the RTFM of semiconductor oxides [19][20][21][22]. Recently, Li et al [23] concluded that oxygen defects are the origin of the ferromagnetism in Yb-doped ZnO film.…”

Effects of Copper Dopants on the Magnetic Property of Lightly Cu-Doped ZnO Nanocrystals

“…It means that secondary oxides can be formed when the Cu doping level exceeds 1%, and this has been verified experimentally [20]. Further, some results found that secondary oxides and its related structures of Cu dopants can also contribute to the RTFM [12,21], which is a discrepancy from that reported before [22]. Hou et al found that porous Cu 2 O thin films manifest unexpectedly large RTFM, which was ascribed to coupling between oxygen vacancies and local magnetic moments [21].…”

“…Further, some results found that secondary oxides and its related structures of Cu dopants can also contribute to the RTFM [12,21], which is a discrepancy from that reported before [22]. Hou et al found that porous Cu 2 O thin films manifest unexpectedly large RTFM, which was ascribed to coupling between oxygen vacancies and local magnetic moments [21]. Gao et al reported that the RTFM of the CuO-ZnO system can be tuned by the interface counts for CuO and ZnO heterostructures [12].…”