Uniaxial and tensile strained germanium nanomembranes in rolled-up geometry by polarized Raman scattering spectroscopy

Guo, Qinglei; Zhang, Miao; Xue, Zhongying; Zhang, Jing; Wang, Gang; Chen, Da; Mu, Zhiqiang; Huang, Gaoshan; Mei, Yongfeng; Di, Zengfeng; Wang, Xi

doi:10.1063/1.4914916

Cited by 15 publications

(17 citation statements)

References 34 publications

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“…The resonance peak position (PP) at 641.0 nm (mode #196 marked by the dark triangle in Figure b) has almost no shift (see details in Section 5 of the Supporting Information). It is known that the tube presents a poor thermal conductivity because of its hollow structure . However, our NC‐diamond microtubes are stable even under the maximal excitation power (25 mW) of our PL setup since diamond has the high thermal conductivity (2000 W m −1 K −1 ) and low thermo‐optic coefficient of (d n /d T ) = 10 × 10 −6 K −1 …”

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confidence: 94%

Deterministic Self‐Rolling of Ultrathin Nanocrystalline Diamond Nanomembranes for 3D Tubular/Helical Architecture

et al. 2017

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Nanocrystalline diamond nanomembranes with thinning-reduced flexural rigidities can be shaped into various 3D mesostructures, such as tubes, jagged ribbons, nested tubes, helices, and nested rings. Microscale helical diamond architectures are formed by controlled debonding in agreement with finite-element simulation results. Rolled-up diamond tubular microcavities exhibit pronounced defect-related photoluminescence with whispering-gallery-mode resonance.

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confidence: 94%

Deterministic Self‐Rolling of Ultrathin Nanocrystalline Diamond Nanomembranes for 3D Tubular/Helical Architecture

et al. 2017

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“…Micro-Raman scattering is an effective tool to estimate the strain distributions in semiconductor nanostructures [16,47]. Figure 3(a) shows a typical Raman spectrum of GeSn NMs excited by the 514 nm laser.…”

Section: Resultsmentioning

confidence: 99%

Infrared tubular microcavity based on rolled-up GeSn/Ge nanomembranes

Tian

Cong

et al. 2018

Nanotechnology

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Germanium-Tin (GeSn) alloys have attracted great amounts of attention as these group IV semiconductors present direct band-gap behavior with high Sn content and are compatible with current complementary metal oxide semiconductor technology. In this work, three dimensional tubular GeSn/Ge micro-resonators with a diameter of around 7.3 μm were demonstrated by rolling up GeSn nanomembranes (NM) grown on a Ge-on-insulator wafer via molecular beam epitaxy. The microstructural properties of the resonators were carefully investigated and the strain distributions of the rolled-up GeSn/Ge microcavities along the radial direction were studied by utilizing micro-Raman spectroscopy with different excitation laser wavelengths. The values of the strains calculated from Raman shifts agree well with the theoretical prediction. Coupled with fiber tapers, as-fabricated devices present a high quality factor of up to 800 in the transmission spectral measurements. The micro-resonators fabricated via rolled-up nanotechnology and GeSn/Ge NMs in this work may have great potential in photonic micro- and nanodevices.

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“…18,23 In our experiment, based on the basic polarization Raman setup (see the schematic setup in Fig. 2), the polarization Raman measurements are performed to determine the strain state of the top Si layer, and the polarized Raman scattering intensity is a function of the polarized angle (denoted as θ) between the [110] axis and the polarization vector of the excitation laser (e i ) (marked in the dashed box in Fig.…”

Section: Resultsmentioning

confidence: 99%

Fabrication and characterization of uniaxially strained SOI with wafer level by mechanical bending and annealing

Miao

Dai

et al. 2018

AIP Advances

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The successful introduction and micron-scale characterization of uniaxial strain with wafer level play pivotal roles in designing and optimizing of the silicon-on-insulator (SOI) microstructures for next-generation strained-Si transistors. In this paper, the successful fabrication of uniaxially strained SOI with wafer level by simply mechanical bending and annealing was realized. Employing polarized Raman measurements, the Raman intensity as a function of the angle between the crystal-axis and the polarization-direction of the scattered light for the strained top Si layer demonstrated the uniaxial character of the induced strain. Micro-Raman measurements revealed that the strain was uniaxially compressive with 0.114% strain value. The transmission electron microscopy characterization was used to reveal the little effect of process on crystallinity, which was confirmed by XRD measurements. The crystal symmetry change from cubic to tetragonal structure of the strained Si was further discussed.

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Uniaxial and tensile strained germanium nanomembranes in rolled-up geometry by polarized Raman scattering spectroscopy

Cited by 15 publications

References 34 publications

Deterministic Self‐Rolling of Ultrathin Nanocrystalline Diamond Nanomembranes for 3D Tubular/Helical Architecture

Deterministic Self‐Rolling of Ultrathin Nanocrystalline Diamond Nanomembranes for 3D Tubular/Helical Architecture

Infrared tubular microcavity based on rolled-up GeSn/Ge nanomembranes

Fabrication and characterization of uniaxially strained SOI with wafer level by mechanical bending and annealing

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