Unidirectional synapse-like behavior of Zr/ZrO<inf>2</inf>-NT/Au layered structure

Abstract

Zirconia nanotubular layer with an outer tube diameter  25 nm was synthesized by potentiostatic anodization. The Zr/ZrO2-NT/Au memristive structure is fabricated using stencil mask and magnetron sputtering techniques. Currentvoltage characteristics are measured in full cycles of resistive switching with varying parameters of the applied harmonic voltage. An equivalent circuit with unidirectional electrical conductivity for the studied structure is proposed. Estimates of the electrical resistance of memristors in high-and intermediate resistivity states are performed. The high synaptic plasticity of memristors based on the Zr/ZrO2-NT/Au structure is shown.

Quantum conductors formation and resistive switching memory effects in zirconia nanotubes

“…In the process, lower values of r are recorded. It should be noted that Schottky barriers are possible to emerge in the region of interfaces in ZrO 2 -based MDM structures [34,39]. In the process, the values of the indicated potential barriers, as well as the features of the Schottky emission in highly resistive states are governed by the materials of the contacts and the defectiveness of the active layer of memristors [17,23,25].…”

“…It is known that the resistive switching in the oxide layer of MDM structures underlying the memory device operation is usually provided by the mobility of anionic (V O ) vacancies [21,25,27,[29][30][31][33][34][35], ions of impurity metals [19-21, 25, 26, 28, 35-37] or Zr + [17,30,38] in the active layer under an external electric field. The electrical resistance of the memristor in low-resistance (LRS), high-resistance (HRS) and intermediate states are governed by the thickness and imperfection of the dioxide layer [24,26,30,33,34,39]. In this case, one of the most probable mechanisms of resistive switching in as-grown ZrO 2 -based structures is the chainordering of V O vacancies followed by the formation of conductive channels or filaments between metal contacts.…”

“…To date, the effects of resistive switching in 40 nm thick ZrO 2 layers produced by the anodic oxidation at room temperature in the galvanostatic mode in an aqueous solution of phosphoric acid have been examined in [22,54]. The current-voltage (I-V ) characteristics of nanotubular ZrO 2 layer-based as-grown MDM structures with unidirectional conductivity, obtained by the anodic oxidation method in the potentiostatic mode, have been reported in [34,39]. The present paper is aimed at measuring and analyzing the static I-V characteristics of nanoelectronic devices based on a ZrO 2 nanotubular layer in unipolar and bipolar resistive switching modes, and also at describing the peculiarities of switching mechanisms in fabricated memristors.…”

Механизмы Термостимулированной Люминесценции В Уф-Облученных Нанотрубках Диоксида Циркония

“…Нанопористрые и нанотубулярные массивы диоксида циркония (ZrO 2 -nt) используются в различных отраслях науки и техники благодаря высокой химической, механической, температурной стабильности и площади поверхности [1][2][3]. На их основе производятся батареи, конденсаторы, топливные элементы, твердые электролиты, катализаторы, дозиметры и мемристоры [4][5][6][7].…”