2020
DOI: 10.1109/jeds.2020.3006293
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Unified Analytical Model for SOI LDMOS With Electric Field Modulation

Abstract: The unified analytical model is proposed for SOI LDMOS (Silicon On Insulator Lateral Double-diffused Metal Oxide Semiconductor) based on the electric field modulation in this paper for the first time. The analytical solutions of the surface electric field distributions and potential distributions are derived on the basis of the 2-D Poisson equation. The variation of the buried layer parameters modulates the surface electric field by the electric field modulation effect to optimize the surface electric field di… Show more

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Cited by 7 publications
(2 citation statements)
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“…With a reverse bias applied to the device, the completely depleted drift region is divided up within the variable-k I buried layer. The potential distribution function ϕ i (x, y) in each drift region satisfies the two-dimensional Poisson equation [20,21]…”
Section: Resultsmentioning
confidence: 99%
“…With a reverse bias applied to the device, the completely depleted drift region is divided up within the variable-k I buried layer. The potential distribution function ϕ i (x, y) in each drift region satisfies the two-dimensional Poisson equation [20,21]…”
Section: Resultsmentioning
confidence: 99%
“…Due to the advantages of silicon technology, including low current leakage, high speed, high gain, and low power losses, the LDD-SOI structure is used as one of the high-efficiency structures in high-voltage applications. [6][7][8] LDD-SOI is designed to achieve high breakdown voltage. The structures designed with SOI technology have advantages and disadvantages.…”
Section: Introductionmentioning
confidence: 99%