Unified charge control model and subthreshold current in heterostructure field-effect transistors

Byun, Young Hee; Lee, K.; Shur, M. S.

doi:10.1109/55.46928

Cited by 75 publications

(23 citation statements)

References 14 publications

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“…The drain current in a long-channel transistor is calculated with the aid of (2) and the charge-sheet approximation [23] and is given by (3) where is the effective mobility, is the channel width, is the thermal voltage, and is the position along the channel length. The other specificity of the ACM model is the use of the unified charge control model (UCCM) [24], which links the carrier charge density to the applied voltages according to (4) where is the pinch-off voltage, and is the channel potential at position . As shown in [25], the use of (3) in conjunction with (4) gives (5) Consequently, the ACM model is fully consistent with the quasi-Fermi potential formulation for the drain current [23].…”

Section: Acm Modelmentioning

confidence: 99%

A compact model of MOSFET mismatch for circuit design

Galup-Montoro

Schneider

Klimach

et al. 2005

IEEE J. Solid-State Circuits

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Section: Acm Modelmentioning

confidence: 99%

A compact model of MOSFET mismatch for circuit design

Galup-Montoro

Schneider

Klimach

et al. 2005

IEEE J. Solid-State Circuits

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“…Since these direct models use mathematical smoothing functions to describe the transition between weak and strong inversion, they are not accurate enough to represent the moderate inversion region, widely employed in low supply voltage circuits [3,4]. Currently, there are essentially two alternative approaches to direct models, namely surface-potential-based (45-based) [1,3,4] and inversion-charge-based (Q'1-based) [2,7,8,9,10] models. In these two indirect models, the drain current and the terminal charges are indirect functions of the terminal voltages through either the surface potential or the inversion charge density.…”

Section: Introductionmentioning

confidence: 99%

“…With regard to Q'i -based models, the inversion charge density is approximated using the unified charge control model (UCCM) [8].…”

Section: Introductionmentioning

confidence: 99%

Fundamentals of Next Generation Compact MOSFET Models

Galup-Montoro¹,

Schneider²,

Pahim³

2005

2005 18th Symposium on Integrated Circuits and Systems Design

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It has recently become clear that the electronics industry is turning away from source-referenced, threshold voltage based MOSFET models. The two main approaches as candidates to replace BSIMtype models are inversion-charge and surface-potential models. This paper provides an overview of the basic physics that must be modeled to build a compact model for the MOSFET and compares the two approaches taken by the developers of next generation models.

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“…13 Currently, the unified charge control model for metal-oxide-semiconductor (MOS) FETs is generally accepted. [14][15][16] It describes the I-V characteristics of the MOSFET for the entire range of parameters from sub-threshold to above-threshold regimes as well as linear and saturation modes. However, in the case of liquid-gated NW FETs, there are still a number of open questions.…”

Section: Introductionmentioning

confidence: 99%

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Pud

Gasparyan

Petrychuk

et al. 2014

Journal of Applied Physics

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Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO2 and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

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Unified charge control model and subthreshold current in heterostructure field-effect transistors

Cited by 75 publications

References 14 publications

A compact model of MOSFET mismatch for circuit design

A compact model of MOSFET mismatch for circuit design

Fundamentals of Next Generation Compact MOSFET Models

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

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