Uniform analysis of electronic sputtering in amorphizable and non-amorphizable insulators and semiconductors

Abstract

Published experimental data on the variation of the Y sputtering yield with the Se electronic stopping power are analyzed. Systematic results for amorphizable (SiO2, SrCeO3, SrTiO3, CeO2) and non- amorphizable (LiF, KBr) insulators and semiconducting TiO2, ZnO, SiC, UO2 are used. Thermal activation mechanism of electronic sputtering is assumed. The ion-induced temperature is estimated applying the Analytical Thermal Spike Model. A highly accurate description of the experimental Y-Se data is given in the whole range of Se without the application of individual materials parameters apart the U activation energy. The values of U for SiO2 and UO2, are considerably lower than the Us sublimation energies. Sputtering proceeds without threshold of Se.

Identical Response of Insulators to Irradiations by Swift Heavy Ions: Application to Experiments on Gd2Ti2O7

“…Systematic data of ten solids (amorphizable and nonamorphizable insulators and semiconductors) were analyzed assuming a thermal activation mechanism. [ 13 ] Excellent agreement was found with the experiments for all solids in a broad range of S e . The results confirm the validity of Equation (1) when it claims that the ion‐induced temperature does not depend on MPs.…”

“…Recently, the uniform temperature distribution described by Equation (1) was checked in the analysis of experimental data on electronic sputtering. Systematic data of 10 solids (amorphizable and non-amorphizable insulators and semiconductors) were analyzed assuming a thermal activation mechanism [13]. Excellent agreement was found with the experiments for all solids in a broad range of Se.…”