Uniform deposition in CVD reactors with mounted wafer configuration

Hong, J.; Lee, Hong H.

doi:10.1016/0022-0248(85)90381-1

Cited by 3 publications

(6 citation statements)

References 4 publications

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“…An indication of the axial uniformity in a tubular LPCVD reactor can be found by taking a ratio of the molar flow rate of silane at the inlet of the reactor to the rate of consumption of silane due to deposition (10). An indication of the axial uniformity in a tubular LPCVD reactor can be found by taking a ratio of the molar flow rate of silane at the inlet of the reactor to the rate of consumption of silane due to deposition (10).…”

Section: Sih4-~ Si + 2h2mentioning

confidence: 99%

“…2) reactor effluent recycled to reactor inlet Fr X = - [10] total reactor effluent Fe we may analyze the effect of recycling on the performance of a LPCVD reacto# in terms of the parameter k since as ---> 1 the characteristics of a CSTR are approached, and as --+ 0 the reactor acts as a conventional LPCVD reactor. 2) reactor effluent recycled to reactor inlet Fr X = - [10] total reactor effluent Fe we may analyze the effect of recycling on the performance of a LPCVD reacto# in terms of the parameter k since as ---> 1 the characteristics of a CSTR are approached, and as --+ 0 the reactor acts as a conventional LPCVD reactor.…”

Section: Addition Of a Recycle Loopmentioning

confidence: 99%

“…1). By accounting for only convective flow in the annular space between the edge of the wafers and the reactor wall and diffusive flow in the region between the wafers, several authors have developed analytic solutions to this problem (7)(8)(9)(10) but were forced to use highly simplified chemical reaction rate expressions to make the resulting mathematical problem tractable. Jensen and Graves (11) have successfully modeled LPCVD reactors, using the rate expression given above, by modeling the annular space between the wafers and the reactor wall and the space between the wafers separately, and then coupling the equations through the boundary conditions.…”

Section: Sih4-~ Si + 2h2mentioning

confidence: 99%

“…During the operation of a LPCVD reactor the goal is to obtain coatings of uniform thickness at all locations on all of the wafers. An indication of the axial uniformity in a tubular LPCVD reactor can be found by taking a ratio of the molar flow rate of silane at the inlet of the reactor to the rate of consumption of silane due to deposition (10). Thus the criterion for axial uniformity is…”

Section: Sih4-~ Si + 2h2mentioning

confidence: 99%

“…Defining the recycle ratio (),) as the fraction of the exit gases recycled back into the gases entering the reactor (Fig. 2) reactor effluent recycled to reactor inlet Fr X = - [10] total reactor effluent Fe…”

Section: Addition Of a Recycle Loopmentioning

confidence: 99%

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Effect of Recycling on the Axial Distribution of Coating Thickness in a Low Pressure CVD Reactor

Collingham

Zollars

1989

J. Electrochem. Soc.

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It has been proposed that a recycle loop would increase the uniformity of the coating thickness in a low pressure chemical vapor deposition reactor. Research was conducted to analytically and experimentally evaluate the effects of recycling on the axial coating thickness uniformity during the deposition of polycrystalline silicon. This research shows that considerable improvement in the uniformity can be obtained through the use of a recycle loop. The amount of improvement depends upon a variety of factors, including pressure, temperature, gas velocity through the reactor, and the recycle ratio. Furthermore, these improvements can increase the uniformity of the wafers while decreasing the amount of reactants required to produce an acceptably thick coating. This is accomplished primarily by operating the reactor at a high conversion so that the amount of reactants lost in the outlet gas is minimized.Chemical vapor deposition (CVD), a process in which a gaseous reactant is converted to a thin coating or film on a solid surface, is widely used throughout the semiconductor industry. In 1973 Tanidawa et al. (1, 2) began inves-

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Section: Sih4-~ Si + 2h2mentioning

confidence: 99%

Section: Addition Of a Recycle Loopmentioning

confidence: 99%