Uniform, large-scale growth of WS2 nanodomains via CVD technique for stable non-volatile RRAM application

Das, Ujjal; Bhattacharjee, Snigdha; Mahato, Barnali; Prajapat, Manoj; Sarkar, Pranab Kumar; Roy, Asim

doi:10.1016/j.mssp.2019.104837

Cited by 51 publications

(41 citation statements)

References 33 publications

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“…In general, for memristive devices, higher voltages must be applied to the pristine device in order to activate the reversible RS behavior via the formation of localized conductive filaments, which is known as the forming process. 38–40 The observed value of V form was much less than that in other reported works, which highlights the figure of merit of the device. The device performance was also compared with that of CsPbBr 3 , where the film was prepared according to earlier research, and the result is displayed in Fig.…”

Section: Resultscontrasting

confidence: 58%

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb₂Br₅ perovskite

Paul

Sarkar

Maiti³

et al. 2022

Dalton Trans.

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Section: Resultscontrasting

confidence: 58%

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb₂Br₅ perovskite

Paul

Sarkar

Maiti³

et al. 2022

Dalton Trans.

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“…Stop voltages of SET and RESET process are defined as V SET and V RESET . In general, two different switching types are defined as unipolar and bipolar [28][29][30], as illustrated in Figure 2. The unipolar switching mode is defined by the amplitude of the applied voltage bias while bipolar switching depends on the polarity of the applied voltage bias.…”

Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

“…The unipolar switching mode is defined by the amplitude of the applied voltage bias while bipolar switching depends on the polarity of the applied voltage bias. In addition, as one of NVM devices, the endurance and retention properties of RRAM are also the presence of device reliability [4][5][6][7][28][29][30].…”

Section: Biological (Silk Protein) Polymer (Pvk) Perovskite (Ch3nh3snmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

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“…2D materials, for example, graphene, [ 82 ] MoS 2 , [ 83 ] h‐BN, [ 84 ] WS 2 , [ 85 ] and black phosphorus, [ 86 ] have been explored for RS devices. Graphene is the most studied as well as the first to be studied.…”

Section: Rs Device and Performance Improvementmentioning

confidence: 99%

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

et al. 2021

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As human society enters the big data era, huge data storage and energy‐efficient data processing are in great demand. The resistive switching device is an emerging device with both inherent memory and computation capabilities. It may bring disruptive influences to modern information technology from bottom up. After decades of study of the materials, mechanisms, and devices, the maturity of the resistive switching device in various applications, for example, nonvolatile memory, artificial neural networks, and information security, could be foreseen. Herein, the recent progress of the resistive switching device from the aspects of materials, devices, and applications is reviewed. First, the resistive switching device, including mechanisms and materials, is briefly discussed. Performance improvement methods with respect to individual device properties are systematically illustrated. Second, characterization technologies for understanding the mechanism and guidance of device design are classified and discussed in depth. Third, various applications based on resistive switching devices are summarized. The review ends with a brief conclusion concerning the challenges from mechanism to algorithm level and the future outlook.

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Uniform, large-scale growth of WS2 nanodomains via CVD technique for stable non-volatile RRAM application

Cited by 51 publications

References 33 publications

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb₂Br₅ perovskite

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb₂Br₅ perovskite

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

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Uniform, large-scale growth of WS2 nanodomains via CVD technique for stable non-volatile RRAM application

Cited by 51 publications

References 33 publications

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb2Br5 perovskite

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb2Br5 perovskite

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

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Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb₂Br₅ perovskite

Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb₂Br₅ perovskite