Uniform pyramid formation on alkaline‐etched polished monocrystalline (100) silicon wafers

Hylton, J.D.; Kinderman, R.; Burgers, A.R.; Sinke, W.C.; Bressers, P.M.M.C.

doi:10.1002/(sici)1099-159x(199611/12)4:6<435::aid-pip150>3.3.co;2-x

Cited by 8 publications

(9 citation statements)

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“…The created replica was fixed on the glass side using an index matching liquid (Norland Products Inc.). A silicon wafer with ⟨100⟩ orientation, etched in KOH with up to 8 μm resulting randomly distributed pyramids, 28,38 was used as a master.…”

Section: ■ Methodsmentioning

confidence: 99%

Efficient Light Management by Textured Nanoimprinted Layers for Perovskite Solar Cells

et al. 2017

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Section: ■ Methodsmentioning

confidence: 99%

Efficient Light Management by Textured Nanoimprinted Layers for Perovskite Solar Cells

et al. 2017

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“…2 × aSi 2 = 7.83 × 10 14 at/cm 2 for the plan h111i [Colour figure can be viewed at wileyonlinelibrary.com] removing about 10 μm on front and rear surfaces cumulated and forming pyramidal shape with h111i facets. 23 The size of the pyramid structure is typically 3 to 5 μm. Next, the wafers are cleaned by our standard cleaning process 24 to remove the native oxide and the impurities on surface.…”

Section: Introductionmentioning

confidence: 99%

Role of silicon surface, polished 〈100〉 and 〈111〉 or textured, on the efficiency of double‐sided TOPCon solar cells

Lozac’h

Nunomura

2020

Progress in Photovoltaics

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We investigate the role of the silicon surface and orientation on double‐sided TOPCon solar cells properties. The solar cells of front and rear, (p) and (n), poly‐Si/SiOx stack, fabricated on polished surfaces oriented 〈100〉 and 〈111〉 and pyramid textured surfaces, are characterized as a function of the thickness of an ultrathin SiOx layer, controlled at atomic scale from one‐ to four‐cycle atomic layer deposition (ALD). Our findings underline that the optimized thickness of the ultrathin SiOx is about 1.1 ± 0.1 nm, corresponding to a two‐cycle ALD, regardless of the surface and orientation of the c‐Si substrate. The open‐circuit voltage is about 10 mV higher on the polished 〈100〉‐oriented surface, associated with lower defect density at the interface of SiOx/c‐Si. On the other hand, the contact resistance is much lower, about 0.45 Ω/cm2, on the polished 〈111〉‐oriented surface. On textured surfaces, we demonstrate a photoconversion efficiency of 19.1% for the double‐sided TOPCon structure strictly for a SiOx thickness with two‐cycle ALD, which underlines the importance of the ALD technique for the precise control of the ultrathin SiOx thickness on textured surface.

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“…Herein, we utilized the microarchitectured Si as a mold, which is developed by a relatively simple and fast wet-chemical etching method. 30 Consequently, designing the TENG device by following the TIL and wet-chemical etching techniques can definitely reduce its manufacturing cost. The proposed TENG device can also be extended for the large-scale production and commercialization since the Si master molds are available for large-scale or roll-to-roll fabrication.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Performance of Microarchitectured PTFE-Based Triboelectric Nanogenerator via Simple Thermal Imprinting Lithography for Self-Powered Electronics

Dudem

Kim

Mule

et al. 2018

ACS Appl. Mater. Interfaces

100

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Triboelectric nanogenerator (TENG) technology is an emerging field to harvest various kinds of mechanical energies available in our living environment. Nowadays, for industrial and large-scale area applications, developing the TENG with low device processing cost and high electrical output is a major issue to be resolved. Herein, we designed a TENG with low cost by employing the microgrooved architectured (MGA)-poly(tetrafluoroethylene) (PTFE; Teflon) and aluminum as triboelectric materials with opposite tendencies. Moreover, the MGA-PTFE was fabricated by a single-step, facile, and cost-effective thermal imprinting lithography technique via micropyramidal textured silicon as a master mold, fabricated by a wet-chemical etching method. Therefore, designing the TENG device by following these techniques can definitely reduce its manufacturing cost. Additionally, the electrical output of TENG was enhanced by adjusting the imprinting parameters of MGA-PTFE. Consequently, the MGA-PTFE was optimized at an imprinting pressure and temperature of 5 MPa and 280 °C, respectively. Thus, the TENG with an optimal MGA-PTFE polymer exhibited the highest electrical output. A robustness test of TENG was also performed, and its output power was used to drive light-emitting diodes and portable electronic devices. Finally, the real application of TENG was also examined by employing it as a smart floor and object-falling detector.

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Uniform pyramid formation on alkaline‐etched polished monocrystalline (100) silicon wafers

Cited by 8 publications

References 0 publications

Efficient Light Management by Textured Nanoimprinted Layers for Perovskite Solar Cells

Efficient Light Management by Textured Nanoimprinted Layers for Perovskite Solar Cells

Role of silicon surface, polished 〈100〉 and 〈111〉 or textured, on the efficiency of double‐sided TOPCon solar cells

Enhanced Performance of Microarchitectured PTFE-Based Triboelectric Nanogenerator via Simple Thermal Imprinting Lithography for Self-Powered Electronics

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