Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

Chang, Hsiang-Szu; Wu, Beilei; Cheng, Sheng-Tzong; Lee, Tu; Lee, Sheng Wei

doi:10.1186/1556-276x-8-349

Cited by 6 publications

(5 citation statements)

References 43 publications

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“…As we know, the penetration depths of the 488-nm line of the Ar+ laser in Ge and Si are about 16 and 400 nm, respectively [ 15 , 22 ]. For the as-grown GeSi MQW sample, most electron-hole (e-h) pairs are generated in the top Si layer and the upper GeSi QW regions.…”

Section: Resultsmentioning

confidence: 99%

“…Chen et al also observed PL emission enhancement in size-uncontrollable Si/Ge superlattice pyramidal nanodots, which were fabricated by chemical selective etching through a self-assembled Ge QD mask [ 14 ]. Recently, Chang et al successfully fabricated ordered SiGe/Si MQW nanorod and nanodot arrays with different heights by combining nanosphere lithography and reactive ion-etching (RIE) process [ 15 ]. However, in the PL spectra, the intensity of the Si/Ge MQW nanorod and nanodot array nanostructure samples did not increase significantly.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays

Jiang¹,

Huang²,

Zhu³

et al. 2016

Nanoscale Res Lett

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Large-area ordered GeSi multi-quantum-well nanopillar array (MQW-NPA) samples with different nanopillar lateral sizes (270, 120, and 70 nm) are fabricated by a cost-effective and scalable dry-etching process in combination with nanosphere lithography technique. A significant enhancement in photoluminescence (PL) intensity has been observed in the GeSi MQW-NPA samples compared with the as-grown GeSi MQW one. Nanopillar samples with different lateral sizes show different enhancements in PL intensity. The enhancements are analyzed quantitatively and attributed to three factors. One is the antireflection of the nanopillar structures. Another is an enhanced extraction in nanopillar arrays at the emission wavelength. Thirdly, the GeSi quantum wells in close proximity to the substrates would have more contribution to the PL than before etching. Our results show that all the three factors should be taken into account in designing and fabricating surface microstructures of GeSi MQW materials in order to improve their optical properties.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays

Jiang¹,

Huang²,

Zhu³

et al. 2016

Nanoscale Res Lett

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“…With this method it is complicated to control the shape and composition of the SiGe micro/nanostructures. [5][6][7][8] (ii) Fabrication by a top-down approach, such as wet etching, [9] reactive ion etching, [10][11][12] ion beam etching [13] or metal-assisted chemical etching. [14] Of the above methods, laser irradiation is an easy to operate technology that has a rapid and localized energy process together with a wide range of tenability.…”

Section: Introductionmentioning

confidence: 99%

Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation*

Li¹,

Deng²,

Wang³

et al. 2021

Chinese Phys. B

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SiGe spheres with different diameters are successfully fabricated on a virtual SiGe template using a laser irradiation method. The results from scanning electron microscopy and micro-Raman spectroscopy reveal that the diameter and Ge composition of the SiGe spheres can be well controlled by adjusting the laser energy density. In addition, the transmission electron microscopy results show that Ge composition inside the SiGe spheres is almost uniform in a well-defined, nearly spherical outline. As a convenient method to prepare sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size, this technique is expected to be useful for SiGe-based material growth and micro/optoelectronic device fabrication.

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“…Polystyrene (PS) nanospheres have been attracting great attention from several research fields due to their ability for fabricating novel nanomaterials and nanostructures, such as ordered nanowire arrays [ 1 – 3 ], nanopillar arrays [ 4 , 5 ], nanohole arrays [ 6 , 7 ], nanodot arrays [ 8 ], core/shell composite materials [ 9 , 10 ], nanomesh [ 11 , 12 ], and magnetic quantum dots [ 13 ]. Particularly, nanosphere lithography has been one of the most popular research hotspots in designing the ordered nanostructure arrays since it takes the advantages of simpler process and lower cost.…”

Section: Introductionmentioning

confidence: 99%

Controllable Fabrication of Non-Close-Packed Colloidal Nanoparticle Arrays by Ion Beam Etching

Yang

Zhang

et al. 2018

Nanoscale Res Lett

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Polystyrene (PS) nanoparticle films with non-close-packed arrays were prepared by using ion beam etching technology. The effects of etching time, beam current, and voltage on the size reduction of PS particles were well investigated. A slow etching rate, about 9.2 nm/min, is obtained for the nanospheres with the diameter of 100 nm. The rate does not maintain constant with increasing the etching time. This may result from the thermal energy accumulated gradually in a long-time bombardment of ion beam. The etching rate increases nonlinearly with the increase of beam current, while it increases firstly then reach its saturation with the increase of beam voltage. The diameter of PS nanoparticles can be controlled in the range from 34 to 88 nm. Based on the non-close-packed arrays of PS nanoparticles, the ordered silicon (Si) nanopillars with their average diameter of 54 nm are fabricated by employing metal-assisted chemical etching technique. Our results pave an effective way to fabricate the ordered nanostructures with the size less than 100 nm.

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Uniform SiGe/Si quantum well nanorod and nanodot arrays fabricated using nanosphere lithography

Cited by 6 publications

References 43 publications

Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays

Fabrication and Photoluminescence Study of Large-Area Ordered and Size-Controlled GeSi Multi-quantum-well Nanopillar Arrays

Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation*

Controllable Fabrication of Non-Close-Packed Colloidal Nanoparticle Arrays by Ion Beam Etching

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