2019
DOI: 10.1186/s11671-019-3095-7
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Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process

Abstract: A new method to grow Indium quantum dots (In QDs) on the surface of an epitaxial InGaN layer by MOCVD is proposed. Uniform-sized In quantum dots have been found to form on the surface of an InGaN layer when a twostep cooling process is taken. Through analyzing, we found that the formation of In QDs on the surface is due to the reaction between the surface In-rich layer and the carrier gas H 2 at the lower temperature period in the twostep cooling process. At the same time, as the density of In QDs is closely d… Show more

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