Nano Online 2016
DOI: 10.1515/nano.11671_2015.182
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Uniformity and passivation research of Al2O3 film on silicon substrate prepared by plasma-enhanced atom layer deposition

Abstract: Plasma-enhanced atom layer deposition (PEALD) can deposit denser films than those prepared by thermal ALD. But the improvement on thickness uniformity and the decrease of defect density of the films deposited by PEALD need further research. A PEALD process from trimethyl-aluminum (TMA) and oxygen plasma was investigated to study the influence of the conditions with different plasma powers and deposition temperatures on uniformity and growth rate. The thickness and refractive index of films were measured by ell… Show more

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