Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography

Lossy, R.; Hilsenbeck, J.; Würfl, Joachim; Obloh, H.

doi:10.1002/1521-396x(200111)188:1<263::aid-pssa263>3.0.co;2-p

Cited by 4 publications

(2 citation statements)

References 3 publications

(3 reference statements)

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“…The measured 2DEG electron density and mobility, at room temperature, are 7.8×10 12 cm -2 and 1400 cm 2 /Vs . Device fabrication is accomplished using 0.5-µm stepper lithography, which results in an excellent homogeneity of the electrical properties over the wafer (Lossy et al, 2001).…”

Section: Gan Hemtmentioning

confidence: 99%

Mobile and Wireless Communications

Tc¹,

Omidyar²

2003

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Her research interests include cooperative relay network, OFDMA resource allocation, adaptive antenna arrays, sensor networks, and signal processing for telecommunication applications.Fumiyuki Adachi received the B.S. and Dr. Eng. degrees in electrical engineering from Tohoku University, Sendai, Japan, in 1973, respectively. In April 1973, he joined the Electrical Communications Laboratories of Nippon Telegraph & Telephone Corporation (now NTT) and conducted various researches on digital cellular mobile communications. From July 1992 to December 1999, he was with NTT Mobile Communications Network, Inc. (now NTT DoCoMo, Inc.), where he led a research group on Wideband CDMA for 3G systems. Since January 2000, he has been with Tohoku University, Sendai, Japan, where he is a Professor at the Dept. of Communications Engineering, Graduate School of Engineering. His research interest is in the area of wireless signal processing (multiaccess, equalization, antenna diversity, adaptive transmission, channel coding, etc.

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Section: Gan Hemtmentioning

confidence: 99%

Mobile and Wireless Communications

Tc¹,

Omidyar²

2003

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“…The introduction of these devices for system level GaN based power amplifiers and MMICs requires reproducible processing techniques established on state-of-the-art process lines [2]. This paper is intended to support this notion.…”

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confidence: 99%

Large Area AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

Lossy

Chaturvedi

Heymann

et al. 2002

phys. stat. sol. (a)

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Large periphery Al0.25Ga0.75N/GaN‐HEMTs on SiC‐substrates are fabricated on a 2‐inch process line using stepper lithography. DC characteristics reveal current densities above 1.2 A/mm and intrinsic transconductances of 360 mS/mm. Depending on device size the maximum frequency of oscillation fmax varies from 27–79 GHz. With these devices a power density of 5.2 W/mm and a power level of 13.8 W is achieved at 2 GHz.

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A surface trap model and its application to analysis of III‐nitride HEMT performance

Bulashevich

Karpov²

2006

Phys. Status Solidi (c)

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A polarity-dependent model of electron/hole traps on a free GaN:Si surface is suggested, accounting for both intrinsic and impurity-induced surface states. The model parameters are fitted to provide the best agreement with available observations. The suggested approach is invoked to explain a recently observed non-monotonic dependence of the surface barrier due to band bending upon the donor concentration in the GaN bulk. The model is used for analysis of DC performance of high-electron mobility transistors (HEMTs) with different cap layer design.

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Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography

Cited by 4 publications

References 3 publications

Mobile and Wireless Communications

Mobile and Wireless Communications

Large Area AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

A surface trap model and its application to analysis of III‐nitride HEMT performance

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