Uniformity investigation of MOCVD‐grown LED layers

Jiang, Zhipeng; Yan, Han; Liu, Sheng; Zhang, Zhi; Gan, Zhiyin; Fang, Haisheng

doi:10.1002/crat.201500135

Cited by 6 publications

(1 citation statement)

References 22 publications

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“…In the circular wafers for light-emitting diodes, MOCVD uses small carriers that can be rotated to improve the uniformity of gas flow and temperature, which is mainly applicable to GaN deposition. [14,15] In the photovoltaic industry, square solar cells are designed to decrease the cost of balance of system. A large MOCVD carrier is also applied to improve productivity.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Thermal Performance of GaAs‐Metal‐Organic Chemical Vapor Deposition Reactor Based on 36 × 4 inches’ Wafers

2022

Crystal Research and Technology

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Currently, limited studies on 3D models based on thermal and flow fields have investigated the effects of geometric and process parameters on the metal-organic chemical vapor deposition (MOCVD) process in large square reactors under severe temperatures. To address these problems, this study conducts numerical simulations and experiments for a large square Gallium Arsenide (GaAs) MOCVD reactor. A 3D model based on the MOCVD reactor coupled with fluid flow and heat transfer is developed to analyze the influence of the heating mode and process parameters on the temperature uniformity and heating efficiency. At 800 °C, the heating time is decreased less than 300 s, and a temperature uniformity of 7.9 °C is achieved, thereby realizing improved uniformity and excellent reactor performance. The use of cross and lateral lamps promote the controllability of the reactor temperature. As the gas flow rate increases, the velocity at the edge of the reactor increases, which induces the difference in the heat transfer coefficient between the center and edge increased. The variations in the gas composition influence the heating rate and temperature uniformity. The results of this study are useful for the design of heating modules in MOCVD reactors.

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Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Thermal Performance of GaAs‐Metal‐Organic Chemical Vapor Deposition Reactor Based on 36 × 4 inches’ Wafers

2022

Crystal Research and Technology

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Design Optimization of Gas Distribution System for Large‐Scale Capacity GaAs‐MOCVD

Yu,

Shen,

et al. 2023

Cryst. Res. Technol.

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In the flexible photovoltaic (PV) industry, increment of the metal‐organic chemical vapor deposition (MOCVD) deposition zone is crucial to reducing the cost of ownership and increasing the power conversion efficiency (PCE). This implies that the larger closed coupled showerhead (CCS) of MOCVD system should be used in the manufacture of flexible gallium arsenide (GaAs) PV thin‐film solar cells. Currently, Aixtron Crius II is the largest commercial CCS reactor for GaAs deposition with 55 × 2 inches circular wafers. As the size of the carrier and showerhead increases, the deposition uniformity and gas flow stability become more difficult to control. To address these issues, previous studies have investigated the effects of geometric and process parameters of MOCVD on the vertical process gas inlet, with either a rotating carrier model represented by Veeco using high‐speed rotating carrier (Turbo Disc), and Aixtron using low‐speed rotating planetary carrier, or a horizontal process gas injector with a rotating carrier. However, these efforts have limited further capacity scale‐up. In this study, numerical simulations and fluid visualization experiments are conducted, based on previous research on thermal uniformity, for design optimization of a gas distribution system in a large square GaAs‐MOCVD reactor. The achieved reactor capacity is 36 × 4 inches square wafers in one process cycle, and the optimal average deposition rate and deposition uniformity of GaAs film are ≈0.430 µm min−1 and 0.93%, respectively.

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High‐Speed GaN‐Based 405 nm Violet Superluminescent Diode with Tilted Facet for Visible Light Communications

Dong,

Yi,

Wang

et al. 2024

Physica Status Solidi (a)

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Visible light communication (VLC) based on superluminescent diode (SLD) is a promising technology with great potential for future 6G optical wireless network. In this work, a 405 nm violet SLD device is fabricated with an 8° tilted facet at one end of the waveguide based on InGaN/GaN quantum wells. The device has an optical power of 14.67 mW under continuous‐wave operation. The full width at half maximum (FWHM) of the SLD at 400 mA is 12.52 nm, which is significantly larger than that in a violet laser diode (LD). Using the SLD as transmitter in VLC system, a high data transmission rate of 3.299 Gbps has been achieved using the discrete multiple tone (DMT) modulation. The corresponding bit error ratio (BER) is measured to be 1.67 × 10−3, which satisfies the forward error correction (FEC) threshold of 3.8 × 10−3. The results suggest that such device can be used as a promising light source for VLC and light fidelity (LiFi) applications.

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Uniformity investigation of MOCVD‐grown LED layers

Cited by 6 publications

References 22 publications

Numerical Simulation of Thermal Performance of GaAs‐Metal‐Organic Chemical Vapor Deposition Reactor Based on 36 × 4 inches’ Wafers

Numerical Simulation of Thermal Performance of GaAs‐Metal‐Organic Chemical Vapor Deposition Reactor Based on 36 × 4 inches’ Wafers

Design Optimization of Gas Distribution System for Large‐Scale Capacity GaAs‐MOCVD

High‐Speed GaN‐Based 405 nm Violet Superluminescent Diode with Tilted Facet for Visible Light Communications

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