Uniformity investigation of pHEMTs in 3-D MMICs for pre and post multilayer fabrication

Alim, Mohammad Abdul; Begum, T.; Rezazadeh, A.A.

doi:10.1016/j.sse.2019.107685

Cited by 4 publications

(3 citation statements)

References 21 publications

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“…Some changes in intrinsic values can be expected (due to process imperfections) but a substantial change in the extrinsic part www.advancedsciencenews.com www.pss-a.com can be seen due to the additional layers deposited on top towards MMIC environments. It has been reported in Alim et al [27] that multistacking does not influence the performance (which is less than 10%) that is implied to the intrinsic part of the devices. The relative sensitivities of the other parameters in Table 1 are calculated using Equation (1), in the same way as in the case of I ds and illustrated afterward in Figure 7-9.…”

Section: Sensitivity-based Analysismentioning

confidence: 81%

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology

Alim

Naima

Rezazadeh

2021

Physica Status Solidi (a)

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Herein, the temperature dependence of direct current (DC) and scattering parameters of GaAs pseudomorphic high‐electron‐mobility transistors (pHEMTs) before and after back‐end‐of‐line process (multilayer technology) by evaluating corresponding equivalent‐circuit models is reported on. The change of the relative sensitivity of the microwave performance with ambient temperature is evaluated using scattering parameter measurements and the corresponding equivalent‐circuit models. The devices studied are two pHEMTs with the same 200 μm gate width but manufactured using pre‐ and post‐multilayer technology. The investigation is conducted under both cooled and heated conditions, through temperature variations from −25 to 125 °C. Although the thermal impact highly depends on the selected operating condition, the bias point is chosen to allow for a fair comparison between the transistor fabricated before and after multilayer technologies to the maximum. Similar patterns of thermal sensitivities are observed for the pre and post multilayer‐manufactured devices but in the case of the multilayer device, the temperature effect is more pronounced.

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Section: Sensitivity-based Analysismentioning

confidence: 81%

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology

Alim

Naima

Rezazadeh

2021

Physica Status Solidi (a)

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“…Other DC figures of merit such as ideality factor ( n ), Schottky barrier height ( ϕ b ), knee voltage ( V knee ), on resistance ( R on ), and series resistance ( R series ) are summarized in Table 2. Detailed extraction procedure of the above‐mentioned parameters can be found in Reference 14.…”

Section: Results and Analysismentioning

confidence: 99%

“…The GaAs MMIC technology is very attractive for many high‐frequency applications as it allows achieving small size, light weight, high reliability, multifunctional capability, low cost, good reproducibility, and high‐volume production. An effective way of developing highly integrated MMICs is based on using the multilayer three‐dimensional (3‐D) technology 11‐15 . An improved version of the conventional AlGaAs/GaAs lattice‐matched HEMT is given by the AlGaAs/InGaAs/GaAs pseudomorphic HEM (pHEMT) 16,17 .…”

Section: Introductionmentioning

confidence: 99%

Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT

Alim

Ali

Crupi

2021

Int J Numerical Modelling

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The key objective of this study is to check out the performance of two multilayer processed double‐heterojunction pHEMTs with different gate width as well as one conventional single‐heterojunction HEMT. Different types of investigation have been undertaken by means of on‐wafer DC, small‐signal, and nonlinear two‐tone measurements. The modeling of the DC output characteristics was successfully accomplished using the FET's Curtice model for all of three tested devices. The main figures of merit for microwave and millimeter wave applications have been determined from scattering parameter measurements and then discussed in detail. Furthermore, to attain a better insight of the device behavior, the nonlinear intermodulation distortion behavior has been also studied and compared for the three devices over different bias conditions. A careful analysis of the DC and RF characteristics over a wide range of working conditions is necessary to ensure adequate transistor operation, depending on the given application of interest.

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Local mismatch and noise investigation for pre and post multilayer pHEMTs

Alim

Jahan

Nipu

et al. 2020

Current Applied Physics

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Uniformity investigation of pHEMTs in 3-D MMICs for pre and post multilayer fabrication

Cited by 4 publications

References 21 publications

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology

Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT

Local mismatch and noise investigation for pre and post multilayer pHEMTs

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