Uniformity of 4H–SiC epitaxial layers grown on 3-in diameter substrates

Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer

“…The epitaxial growth was carried out using a horizontal hot-wall type CVD system [10]. The source gases were SiH 4 and C 3 H 8 with a H 2 carrier gas.…”

Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction Structure

“…Comparing the aluminum concentration focused at the substrate/epi-layer interface, by changing the C/Si ratio from the standard value 1.5 to 0.8, it was found that the lower C/Si ratio (0.8) was the key to avoiding the aluminum contamination. From the earlier study, much lower (0.6) C/Si ratio was found to make the uniformity of the carrier concentration worse [8]. Therefore, the intermediate value of 0.8 was chosen as the optimum value.…”

“…The epi-layers with nitrogen-doping were grown by using a horizontal hot-wall CVD reactor [8]. Precursor gases used were monosilane and propane in hydrogen atmosphere.…”

Application of Computational Fluid Dynamic Simulation to SiC CVD Reactor for Mass Production

“…최근에 Kim등은 전산유체역학(computational fluid dynamics: CFD) 모사를 통하여 리엑터 내부의 유속이나 조성 의 분포를 예측하는 기술을 통하여 CVD 리엑터 내부의 현상을 이해할 수 있음을 제안하였다 7,8) . 최근까지 탄화 실리콘의 CVD 공정을 CFD를 통하여 예측한 모델은 수 차례 제시되었으나 1,5,[9][10][11][12] 대부분의 연구가 단결정 탄화규 소 증착과 관련된 시뮬레이션이고 대면적의 다결정 후막 에 응용하고자 하는 연구 5,9,11) 는 Fig. 5의 (a), (b), (c)에 그래프로 나타내었다.…”