Uninterruptible power supply employing IGBTs in parallel with electronic protection

Ravikumar, A.R.; Ragupathi, S.; Yadukumar, K.; Pushpakala, K.S.; Nandakumar, V.N.; Hegde, R.K.; Parameswaran, S.; Reddy, Mahesh C.

doi:10.1109/pedes.1996.536409

Cited by 1 publication

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“…Insulated-gate bipolar transistor is a semiconductor switching device and is commonly used in uninterruptible power supply units, refrigeration and air conditioning systems, high and medium power inverters and in traction converters [16][17][18]. This type of transistor consists of MOSFET (Metal-oxide semiconductor field-effect transistor) and BJT (bipolar junction transistor).…”

Section: Igbt Transistormentioning

confidence: 99%

Opto-Electronics Review

Piwowarski

2020

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Currently, work is underway to manufacture and find potential applications for a photoconductive semiconductor switch made of a semi-insulating material. The article analyzes the literature in terms of parameters and possibilities of using PCSS switches, as well as currently used switches in power and pulse power electronic system. The results of laboratory tests for the prototype model of the GaP-based switch were presented and compared with the PCSS switch parameters from the literature. The operating principle, parameters and application of IGBT transistor, thyristor, opto-thyristor, spark gap and power switch were presented and discussed. An analysis of the possibilities of replacing selected elements by the PCSS switch was carried out, taking into account the pros and cons of the compared devices. The possibility of using the currently made PCSS switch from gallium phosphide was also discussed.

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Section: Igbt Transistormentioning

confidence: 99%

Opto-Electronics Review

Piwowarski

2020

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Uninterruptible power supply employing IGBTs in parallel with electronic protection

Cited by 1 publication

References 0 publications

Opto-Electronics Review

Opto-Electronics Review

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