Unipolar interface-charge-limited current

Nicolet, M.‐A.; Rodriguez, Valentin; Stolfa, D. L.

doi:10.1016/0039-6028(68)90016-2

Cited by 10 publications

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“…Due to the interface blocking effect, many oxygen vacancies are deposited and assembled at the Ga 2 O 3−x /SiC interface. The depletion region is thus broadened and the electrons tunneling through the interface barrier become harder; this is called the interface charge limited current [30]. This induces a decrease in conductance, which can be recognized in figure 5(a).…”

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confidence: 99%

Bipolar resistive switching of Pt/Ga₂O_3−x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios

et al. 2020

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A multiple-layer thin film of Pt/Ga2O3−x/SiC/Pt-based resistive switching is systematically investigated. Excellent bipolar resistive switching behavior is observed with a high resistance switching ratio of OFF/ON up to 103. The current–voltage relations plot implies the Ohmic conductance of the ON state, while the space and interface charge limited the current of the OFF state. The micro mechanism of resistive switching is explained by the formation/rupture of conductive filaments formed out of oxygen vacancies within the Ga2O3−x and SiC region. In particular, these devices exhibit excellent stability. The high OFF/ON resistance ratio can be completely retained for a number of days without degradation.

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Section: Resultsmentioning

confidence: 99%

Bipolar resistive switching of Pt/Ga₂O_3−x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios

et al. 2020

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The effect of diffusion on space charge currents in insulators

Thoma

1973

Phys. Stat. Sol. (a)

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The influence of the thermal diffusion on the current-voltage characteristics i(U) of insulators with ohmic electrodes is generally believed to be negligible. i(U)-curves being linear in U a r e expected at low acting voltages U. Some considerations regarding diffusion (1 to 3) give implicit i(U)-relations only. Weakly non-linear curves a r e measured generally, but also steeply rising, non-linear and diffusion-governed curves a r e reported (4) and discussed using quite different models (5, 6). The present results show a change of diffusion conditions by small temperature differences between the electrodes and a correspondingly large influence on i(U)-curves. Electron injecting (non-transparent) Ga, Al, o r In electrodes were evaporated onto cylindrical and pure ZnS crystals (Id = 10 mm, thickness L = 2/10, 1/2, and 1 mm) being cut from a large bulb in a parallel plate arrangement. The electrode temperatures could independently be stabilized and controlled at equal o r different values between 18 and 30 OC. The samples were mounted into a vacuum vessel. Fig. 1 , curve a , shows an i(U)-curve between 0 . 2 and 2.5 V in small steps, measured with both electrodes at 20 C. Curve b shows a characteristic of an equally sized sample with a constant temperature of 30 C of the positive electrode whereas the negative electrode is kept at 20 OC. If in contrast to this the negative electrode is kept at 30 C and the positive one at 20 C, curve c is found.The results a r e reproducible at identical conditions besides small deviations. This is also the case, if the measurements were made using different but equally sized samples in order to exclude any effects of formerly trapped charges. These experiments were repeated using other temperatures. There is a close correspondence of the results for crystals of different L. Between 0 . 2 and 1 eV i is proportional to L . Curve b is only observed if the positive electrode injects more charge than the negative one on thermal or any other reasons. If the larger space charge cloud is located at the positive side, a reduced current is observed folluwed 0 0 0 0

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Local Trapping States for Charge Carriers in Molecular Crystals

Silinsh

1980

Springer Series in Solid-State Sciences

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Unipolar interface-charge-limited current

Cited by 10 publications

References 10 publications

Bipolar resistive switching of Pt/Ga₂O_3−x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios

Bipolar resistive switching of Pt/Ga₂O_3−x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios

The effect of diffusion on space charge currents in insulators

Local Trapping States for Charge Carriers in Molecular Crystals

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Unipolar interface-charge-limited current

Cited by 10 publications

References 10 publications

Bipolar resistive switching of Pt/Ga2O3−x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios

Bipolar resistive switching of Pt/Ga2O3−x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios

The effect of diffusion on space charge currents in insulators

Local Trapping States for Charge Carriers in Molecular Crystals

Contact Info

Product

Resources

About

Bipolar resistive switching of Pt/Ga₂O_3−x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios

Bipolar resistive switching of Pt/Ga₂O_3−x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios