Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

Katiyar, Rajesh K.; Sharma, Yogesh; Diestra, Danilo G. Barrionuevo; Misra, Pankaj; Sudheendran, K.; Pavunny, Shojan P.; Morell, Gerardo; Weiner, Brad R.; Scott, J. F.; Katiyar, Ram S.

doi:10.1063/1.4914475

Cited by 29 publications

(13 citation statements)

References 25 publications

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“…We have also measured the temperature-dependent resistance variation of the ReRAM device; the results showed that the resistance increases upon increasing the measuring temperature in the LRS (not shown here), which proves that the filament is really composed of metal ions. The same results are also reported in literature [ 18 , 19 , 20 ].…”

Section: Resultssupporting

confidence: 90%

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

You

Lin

et al. 2018

Materials

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Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window (>106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology.

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Section: Resultssupporting

confidence: 90%

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

You

Lin

et al. 2018

Materials

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“…In recent photovoltaic studies , BFO thin films and crystals with various electrodes have shown properties with potential for PV applications. Pt/BFO/SRO and Pt/Sm:BFO/SRO thin films heterostructures showed significantly higher PV current densities in the lowresistance state under white-light illumination [30,31]. BFO has been considered a p-type semiconducting material resulting from the Bi 3+ loss during the sintering process, which causes vacancies to act as p-type centers [42].…”

Section: Introductionmentioning

confidence: 99%

Enhanced photovoltaic effects in A-site samarium doped BiFeO3 ceramics: The roles of domain structure and electronic state

Chen

et al. 2016

Journal of the European Ceramic Society

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This work reports enhanced photovoltaic (PV) responses of (Bi 1 − x Sm x)FeO 3 (x = 0.0, 0.05, 0.10) ceramics (BFO100xSm) with ITO film under near-ultraviolet irradiation (= 405 nm). The ceramics were characterized by micro-Raman scattering, high-resolution transmission electron microscopy, and synchrotron X-ray absorption spectroscopy (XAS). A rhombohedral R3c symmetry with tilted FeO 6 octahedra has been confirmed. The Fe K-edge absorption spectra reveal a slight shift toward higher energy as A-site Sm 3+ substitution increases. The oxygen K-edge XAS reveals an enhancement of hybridization between the O 2p and unoccupied Fe 3d states due to Sm doping. The optical band gaps are in the range of 2.15-2.24 eV. The maximal PV power-conversion and external quantum efficiencies respectively reach 0.37% and 4.1% in the ITO/BFO5Sm/Au heterostructure. The PV responses can be described quantitatively by a p-n-junctionlike model. The domain structures and hybridization between the O 2p and Fe 3d states play important roles for the PV responses.

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“…The retention of the resistive switching states was tested to confirm the applicability, as the long-term retention of HRS LRS is an important factor in ReRAM [15]. As a result, the retention capability of the structure was investigated further by monitoring the states at a read voltage of +0.5 V [7].…”

Section: Resultsmentioning

confidence: 99%

Bipolar Resistive Switching Behaviour of Polycrystalline BiFeO₃ Thin Films Synthesized via Sol-gel Assisted Spin Coating Technique

Halge

Narwade

et al. 2023

J. Phys.: Conf. Ser.

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Polycrystalline BiFeO3 thin films have been grown on glass substrates using a simple but efficient method commonly known as the spin coating technique. When used in a Cu / BiFeO3 / Cu configuration, the annealed BiFeO3 film (at 350 °C) exhibits bipolar resistive switching behaviour. The device shows stable resistive switching behaviour, where a stable hysteresis in the current–voltage curve was well developed by applying +/- 10 V at room temperature. The ratio of resistance in the high resistance state to the low resistance state of the device is ~ 104 with a good retention time of more than 106 min. The Poole–Frenkel emission at the Cu / BiFeO3 interface is proposed, and a redistribution of oxygen vacancies along the grain boundaries is found to play a key role in the resistance switching in the polycrystalline pure BiFeO3 films.

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Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

Cited by 29 publications

References 25 publications

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Enhanced photovoltaic effects in A-site samarium doped BiFeO3 ceramics: The roles of domain structure and electronic state

Bipolar Resistive Switching Behaviour of Polycrystalline BiFeO₃ Thin Films Synthesized via Sol-gel Assisted Spin Coating Technique

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Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

Cited by 29 publications

References 25 publications

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique

Enhanced photovoltaic effects in A-site samarium doped BiFeO3 ceramics: The roles of domain structure and electronic state

Bipolar Resistive Switching Behaviour of Polycrystalline BiFeO3 Thin Films Synthesized via Sol-gel Assisted Spin Coating Technique

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Bipolar Resistive Switching Behaviour of Polycrystalline BiFeO₃ Thin Films Synthesized via Sol-gel Assisted Spin Coating Technique