crystal substrates when epitaxial growth is pursued. These requirements dramatically limit their applicability excluding the possibility to prepare many artificial multilayered architectures to investigate emergent phenomena that arise in thin films and at their interfaces, [2] as well as the fabrication of flexible devices and monolithic integration into silicon. [3-5] Many efforts have been devoted to develop procedures to detach the functional oxide film from the growth substrate in order to be able to freely manipulate it. They include mechanical exfoliation, [6] dry etching, [7,8] and wet-chemical etching. [9,10] Among the chemical etching procedures, the use of a sacrificial layer, which is incorporated between the substrate and the functional oxide, appears as a fast and relatively low-cost process. For this approach to be successful, the sacrificial layer should transfer the epitaxy from the substrate to the desired oxide, stand the deposition process of the functional oxide and be selectively removed by a chemical treatment, which allows to retrieve the original single-crystal substrate. (La,Sr)MnO 3 has been proved effective to be selectively etched by an acid blend allowing the transfer of single epitaxial Pb(Zr,Ti)O 3 layers [11] and more complex architectures such as SrRuO 3 /Pb(Zr,Ti)O 3 /SrRuO 3. [12] Recently, the use of water-soluble Sr 3 Al 2 O 6 (SAO) sacrificial layer enlarged the family of free-standing epitaxial perovskite oxide layers (SrTiO 3 , BiFeO 3 , BaTiO 3) [13-15] and multilayers (SrTiO 3 /(La,Sr) MnO 3) [16] that can be manipulated opening a whole new world of opportunities. [5,10,17] The deposition techniques to prepare such structures is also a key factor to be considered not only for film quality but also for process scalability. While high vacuum deposition techniques such as molecular beam epitaxy and pulsed laser deposition are well established techniques to produce high quality films, [1,18-20] alternate procedures that can deliver low-cost production such as solution processing and atomic layer deposition are gaining interest. [21,22] Chemical solution deposition (CSD) is considered a mature technique for the preparation of oxide films. The synthesis of ternary and quaternary oxides is not a trivial task but the pioneering work done in ferroelectric lead zirconate titanate inspired many researchers to extend it to other compositions and broaden the application fields. [23,24] Nonetheless, there is still a myriad of compositions to be explored, including SAO, The growth of epitaxial complex oxides has been essentially limited to specific substrates that can induce epitaxial growth and stand high temperature thermal treatments. These restrictions hinder the opportunity to manipulate and integrate such materials into new artificial heterostructures including the use of polymeric and silicon substrates and study emergent phenomena for novel applications. To tackle this bottleneck, herein, a facile chemical route to prepare water-soluble epitaxial Sr 3 Al 2 O 6 thin films to be ...