Unique correlation between non-linear distortion of tangential magnetic field and magnetic excitation voltage – Unexplored ferromagnetic phenomena and their application for ferromagnetic materials evaluation

Abstract

a b s t r a c tUnexplored ferromagnetic phenomena of non-linear distortion of tangential magnetic field (H T ) and that of excitation voltage (V E ) across the electromagnetic (EM) yoke, in the presence of a ferromagnetic material between the poles of the EM yoke, have been uniquely correlated in this study. Both the H T and V E show similar distortion behaviour, but in the opposite direction, with unique shape for each ferromagnetic sample with different microstructural conditions. Interestingly unique correlation between) profiles and their ability to distinguish different magnetisation behaviour of ferromagnetic material with different microstructures have also been discussed in this study. One to one correlation between the distortion of H T and V E shown in this study is clear evidence that both these parameters are strongly influenced by the same mechanism of magnetisation process, but in different ways. The systematic changes in the height and position of the peak and the trough on the time derivative profiles of V E and H T reflect the subtle differences in the magnetisation process for each microstructural condition of the steel. This study reveals the new scientific insight and good potential of this novel as well as very simple approach of distortion analysis of H T and V E for understanding the influence of material properties on the mechanism of magnetisation process and also their suitability for variety of applications related to materials evaluation of ferromagnetic components and structures.

Influence of magnetic domain wall orientation on Barkhausen noise and magneto-mechanical behavior in electrical steel

“…With the sample magnetized by the external static field, a demagnetizing field H d eff in the opposite direction of the magnetization is created and reduces the effective field above the sample accordingly. In a simplified picture, the effective internal field H in in the sample can be expressed by [44]:…”