Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions

Abstract

We demonstrate the universal 1/f type current noise in Ag based, nanofilamentary resistive switches which arises from internal resistance fluctuations.

A non-oxidizing fabrication method for lithographic break junctions of sensitive metals

“…In particular, silver is a versatile electrode material for both single-molecule electronics [24][25][26][27][28][29][30] and for resistive switching memory devices. [31][32][33][34][35][36][37][38][39][40][41][42][43][44][45] Therefore we demonstrate the merits of the proposed approach by investigating nanofabricated silver break junctions which were so-far inaccessible due to their extreme sensitivity to oxygen plasma treatment. We benchmark our devices through the pronounced single-atom peak emerging in the measured conductance histogram.…”

1/f Noise and Machine Intelligence in a Nonlinear Dopant Atom Network

“…In 1/f noise, the power spectral density (PSD) of the noise is inversely proportional to the frequency f. A 1/f PSD reflects the scale-invariant correlations of the underlying physical processes in a broad scope of systems for information processing. [1][2][3][4][5][6][7] The slow fluctuations corresponding to the lowfrequency end of 1/f noise impose boundary conditions on the systems' operation, which sometimes require additional signal conditioning techniques such as filtering. Therefore, understanding the underlying mechanism(s) of 1/f noise facilitates achieving optimal performance, by optimizing the individual components and the system design.…”

“…[4,12] In spite of the occurrence of 1/f noise in many natural and artificial systems, and decades of research, a unified explanation of 1/f noise has not been agreed upon. In the context of developing efficient physical hardware for machine intelligence, [3,5,[13][14][15][16] 1/f noise in individual components, such as memristors, has been studied. [3,5] Yet, the mechanisms underlying 1/f noise may differ in different electronic devices [1,3,9,17] and vary across scales from device level to system level.…”

“…Our results suggest that a DNPU should be biased at a critical point to enable a discernable response to an input signal on the one hand and to retain the ability of nonlinear data transformation on the other hand. We deem this an important guiding principle for natural computing [5,[13][14][15][16] and speculate that the dependence of performance on bias conditions can be generalized to biological neural networks and potentially facilitates the understanding of the functioning of brain. [22][23][24][25][26][27]…”

Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions

“…The roles of the matrix, the electrode, and their interfaces in the filament formation have been extensively investigated covering a broad range of materials systems [4]. Although AgI has been recognized as an intrinsic ionic conductor supporting high Ag + ionic mobilities already since the pioneering era of photography, thorough studies exploring its resistive switching properties are still relatively under-represented in the literature [29][30][31][32][33][34]. In this paper we explore the dynamical properties of room-temperature resistive switching established in metallic Ag/AgI/PtIr nanojunctions.…”