Universal and scalable route to fabricate GaN nanowire-based LED on amorphous substrate by MOCVD

Johar, Muhammad Ali; Song, Hyun-Gyu; Waseem, Aadil; Hassan, Mostafa Afifi; Bagal, Indrajit V.; Cho, Yong-Hoon; Ryu, Sang‐Wan

doi:10.1016/j.apmt.2019.100541

Cited by 30 publications

(28 citation statements)

References 39 publications

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“…4(e and f), as it was observed in our previous publications. 26,37 The optical properties of the active region grown on the semi-polar plane are enhanced when the inclination angle of the polar-plane to the semi-polar growth plane ranges from 45 to 60 . For the incorporation of indium into the InGaN QWs, over a wide range of growth temperatures, the most favorable planes are (11 22) and (10 21).…”

Section: Resultsmentioning

confidence: 99%

Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template

et al. 2020

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Section: Resultsmentioning

confidence: 99%

Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template

et al. 2020

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“…The melting temperature of the catalyst (Au or Ni for GaN NW growth) can be reduced by alloying it with low melting‐point metals such as indium (In) or gallium (Ga). [ 40,41 ]…”

Section: Introductionmentioning

confidence: 99%

Highly Durable Piezoelectric Nanogenerator by Heteroepitaxy of GaN Nanowires on Cu Foil for Enhanced Output Using Ambient Actuation Sources

Johar

Waseem

Hassan

et al. 2020

Advanced Energy Materials

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Highly durable piezoelectric nanogenerators (PENGs) with high conversion efficiency and high power density are of great interest. Here, a foldable, scalable, durable, cost‐effective, sensitive, and high current output PENG developed by the direct integration of van der Waals heteroepitaxial growth of GaN nanowires (NWs) by metal‐organic chemical vapor deposition using a graphene coating on a Cu‐foil is reported where the direct growth of GaN on the metallic substrate plays a key role in achieving the high stability of the PENG. The PENG provides a durable and highly sensitive output compared to the previously reported GaN NW‐based PENGs fabricated by transferring NWs onto a foreign substrate. The reported PENG can harvest energy from a variety of ambient actuation sources such as bending, vibrations, air flow, finger pressing, foot striking, fluid flow, and normal force by weights, with the maximum piezoelectric output voltage and current density recorded as 19.7 V and 1.9 mA cm−2, respectively. Due to its high conversion efficiency, the PENG can power several LEDs and thus can be used to power electronic devices. More importantly, the PENG retains its performance after more than 4 million actuation cycles, demonstrating the potential of the design for practical applications using biomechanical and ambient actuation sources for self‐powered systems.

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“… 29 The triangle-shaped GaN shell was annealed in NH 3 at the same temperature adopting the same approach as reported in our previous work. 30 The grown GaN shell acted as a host for the monocrystalline growth of InGaN/GaN MQW shells. High crystal quality InGaN/GaN MQWs are expected to grow around the triangle-shaped GaN shells.…”

Section: Resultsmentioning

confidence: 99%

“…After the growth of the GaN shell, a postgrowth nitridation was conducted to improve the crystal quality up to the atomic level as reported in our previous work. 30 Subsequent to the shell growth of GaN, the InGaN-QW/GaN-barrier shells were grown, and the flow rates of TMGa and NH 3 were maintained as 31.6 μmol·min –1 and 357 mmol·min –1 , respectively. To grow the InGaN QW, the flow rates of TMGa and NH 3 were fixed at 27.6 μmol min –1 and 357 mmol min –1 , whereas the flow rate of TMIn varied as 17.3, 34.6, and 51.9 μmol min –1 for samples LIn, MIn, and HIn, respectively.…”

Section: Experimental Proceduresmentioning

confidence: 99%

Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate

et al. 2020

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Beryllium oxide (BeO) belongs to a very unique material family that exhibits the divergent properties of high thermal conductivity and high electrical resistivity. BeO has the same crystal structure as GaN, and the absolute difference in the lattice constants is less than 17%. Here, the growth of GaN nanowires (NWs) on the polycrystalline BeO substrate is reported for the first time. The NWs are grown by a vapor–liquid–solid approach using a showerhead-based metal–organic chemical vapor deposition. The growth direction of NWs is along the m -axis on all planes of the substrate, and it is confirmed by transmission electron microscopy (TEM) and selected area electron diffraction (SAED) patterns. The vertical and tilted growth of NWs is due to the different planes of the substrate such as the m -plane, a -plane, and semipolar planes and is confirmed by X-ray diffraction. Subsequently, the GaN shell and InGaN/GaN multiple quantum wells (MQWs) are coaxially grown using a vapor–solid approach in the same reactor. A very high crystal quality is verified by TEM and SAED and is also confirmed by measuring the photoluminescence. The optical emission is tuned for the entire visible spectrum by increasing the indium incorporation in InGaN quantum wells. The conformal growth of InGaN/GaN MQW shells and the defect-free nature of the structure are confirmed from spatially resolved cathodoluminescence. This study will provide a platform for researchers to grow GaN NWs on the BeO substrate for a range of optical and electrical applications.

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Universal and scalable route to fabricate GaN nanowire-based LED on amorphous substrate by MOCVD

Cited by 30 publications

References 39 publications

Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template

Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template

Highly Durable Piezoelectric Nanogenerator by Heteroepitaxy of GaN Nanowires on Cu Foil for Enhanced Output Using Ambient Actuation Sources

Epitaxial Growth of GaN Core and InGaN/GaN Multiple Quantum Well Core/Shell Nanowires on a Thermally Conductive Beryllium Oxide Substrate

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