Universal behavior of giant electroresistance in epitaxial La0.67Ca0.33MnO3 thin films

Zhao, Yongjie; Wang, Y. H.; Zhang, G. M.; Zhang, B.; Zhang, X. P.; Yang, Changxi; Lang, Peilin; Zhu, M. H.; Guan, Pengfei

doi:10.1063/1.1889241

Cited by 58 publications

(44 citation statements)

References 18 publications

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“…This compound has been much studied and the resistance-temperature behaviour often reported [1,2,4,10,25,29,30,42,47]. The phase diagram predicts a MIT at ~250 K [30], and we observe T p = 245 K (Figs.…”

Section: = 03mentioning

confidence: 89%

“…In ultrathin films [25] the non-linear characteristics are not intrinsic; extrinsic factors include contact resistance and joule heating. effects observed in thicker films are thought to arise due to grain structure and disorder [4].…”

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confidence: 99%

“…The most extensively-studied composition is La 0.7 Ca 0.3 MnO 3 [1,2,4,5,25,29]. This composition is the member of the La 1-x Ca x MnO 3 series with the highest temperature of the MIT [30]; it changes from paramagnetic insulator (PMI) to ferromagnetic metal (FMM) at about 250 K when in the bulk form.…”

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confidence: 99%

“…1. As with magnetoresistance, the more emphatic terms "giant" ER (GER) [4,6,[14][15][16] and "colossal" ER (CER) [2,3,7,8,[10][11][12][13][17][18][19][20][21][22] have been adopted, although no specific criteria appear to have been articulated as to when ER becomes GER or CER.…”

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confidence: 99%

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Metal-insulator transition and electroresistance in lanthanum/calcium manganites La1-xCa x MnO3 (x= 0–0.5) from voltage-current-temperature surfaces

2008

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Of the perovskites, ABX 3 , a subset of special interest is the family in which the A site is occupied by a lanthanide ion, the B site by a transition metal and X is oxygen, as such materials often exhibit a large change in electrical resistance in a magnetic field, a phenomenon known as "colossal" magnetoresistance (MR). Two additional phenomena in this family have also drawn attention: the metal-insulator transition (MIT) and electroresistance (ER). The MIT is revealed by measuring resistance as a function of temperature, and observing a change in the sign of the gradient. ER -the dependence of the resistance on applied current -is revealed by measuring resistance as a function of applied current. Up until now, the phenomena of MIT and ER have been treated separately. Here we report simultaneous observation of the MIT and ER in the lanthanum/calcium manganites. We accomplish this by measuring voltage-current curves over a wide temperature range (10-300 K) allowing us to build up an experimental voltage surface over current-temperature axes. These data directly lead to resistance surfaces. This approach provides additional insight into the phenomena of electrical transport in the lanthanum/calcium manganites, in particular the close connection of the maximum ER to the occurrence of the MIT in those cases of a paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition.

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confidence: 89%

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confidence: 99%

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confidence: 99%

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Metal-insulator transition and electroresistance in lanthanum/calcium manganites La1-xCa x MnO3 (x= 0–0.5) from voltage-current-temperature surfaces

2008

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“…In recent works [3,4,8], several models based on current flow through conducting channels (network of filaments) in nonhomogeneous media were carried out to explain magnetic and electrical transport properties of various manganite films. To discuss a role played by various factors as current, electrical field intergrain boundaries in nonlinear properties (electroresistance) of the prepared LCMO films let us estimate the values of mean electrical field (E d ) defined as V /d (here d is the gap between electrodes and V is the corresponding voltage drop).…”

Section: Discussionmentioning

confidence: 99%

Electroresistance of Electrically Nonhomogeneous La_0.67Ca_0.33MnO₃/MgO Thin Films

Kiprijanovič¹,

Lučun²,

Ašmontas³

et al. 2007

Acta Phys. Pol. A

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Current and electrical field-induced electroresistive effects were investigated for La 0.67 Ca 0.33 MnO 3 /MgO thin films demonstrating nanosized electrical inhomogeneities. Two different models based on enhanced conductivity of intergrain boundaries by injecting spin-polarized carriers from ferromagnetic grains and electrical field-enhanced hopping of carriers in high resistance intergrain media were carried out to explain nonlinear electrical properties of the films.

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Oxygen pressure dependent electroresistance in La0.9Sr0.1MnO3 thin films grown by laser molecular beam epitaxy

Ouyang

Wang

Liu

et al. 2008

Sci. China Ser. G-Phys. Mech. As

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We report here studies on the influence of oxygen pressure on the electroresistance behavior of La 0.9 Sr 0.1 MnO 3 thin films fabricated by laser molecular beam epitaxy. It was found that the film deposited at lower oxygen pressure shows larger c-axis parameter, higher resistance, and more distinct electroresistance. These results reveal that the electroresistance of manganite thin films can be tuned by the conditions of film fabrication. La 0.9 Sr 0.1 MnO 3 thin film, electroresistance effect, laser molecular beam epitaxy Colossal magnetoresistive (CMR) materials with the type R 1 x A x MnO 3 (R is a trivalent rare-earth ion and A is a divalent dopant) have triggered intensive interest due to their plentiful electronic and magnetic phase diagram. These materials exhibit different ground states, and an external disturbance, such as pressure, electric current and light illumination, can easily drive the system from one state to another state [1 3] . Recently, numerous efforts have been made to characterize and understand the effect of electric current on the transport property of CMR materials [4 12] . It was reported that increasing the applied electric current can increase (decrease) the resistivity drastically, resulting in giant positive (negative) electroresistance (ER). Previous reports on ER effect concentrate mainly on the manganite thin films with the doping level around x~1/3, and rare work has been done on lightly doped lanthanum manganese oxides. The light-doped samples, such as La 0.9 Sr 0.1 MnO 3 , are demonstrated to show some advantageous features in p-n junctions [13,14] . So, their ER behaviors might also exhibit some interesting features. On the other hand, the manganite thin films showing giant ER effect were usually fabricated by pulsed laser deposition, and thus the

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Universal behavior of giant electroresistance in epitaxial La0.67Ca0.33MnO3 thin films

Cited by 58 publications

References 18 publications

Metal-insulator transition and electroresistance in lanthanum/calcium manganites La1-xCa x MnO3 (x= 0–0.5) from voltage-current-temperature surfaces

Metal-insulator transition and electroresistance in lanthanum/calcium manganites La1-xCa x MnO3 (x= 0–0.5) from voltage-current-temperature surfaces

Electroresistance of Electrically Nonhomogeneous La_0.67Ca_0.33MnO₃/MgO Thin Films

Oxygen pressure dependent electroresistance in La0.9Sr0.1MnO3 thin films grown by laser molecular beam epitaxy

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Universal behavior of giant electroresistance in epitaxial La0.67Ca0.33MnO3 thin films

Cited by 58 publications

References 18 publications

Metal-insulator transition and electroresistance in lanthanum/calcium manganites La1-xCa x MnO3 (x= 0–0.5) from voltage-current-temperature surfaces

Metal-insulator transition and electroresistance in lanthanum/calcium manganites La1-xCa x MnO3 (x= 0–0.5) from voltage-current-temperature surfaces

Electroresistance of Electrically Nonhomogeneous La0.67Ca0.33MnO3/MgO Thin Films

Oxygen pressure dependent electroresistance in La0.9Sr0.1MnO3 thin films grown by laser molecular beam epitaxy

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Electroresistance of Electrically Nonhomogeneous La_0.67Ca_0.33MnO₃/MgO Thin Films