Universal Ion Source™ for Cluster and Monomer Implantation

Horsky, T. N.

doi:10.1063/1.2401484

Cited by 4 publications

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“…At the present time, we are aware of only one other source of molecular (phosphorus and arsenide) ions−the Cluster Ion Source developed by Thomas Horsky of SemEquip Inc. 6 The emission surface area in the Cluster Ion Source is an order of magnitude larger than the emission surface area in our source. However, if we compare the emission current densities in the two sources, we find them nearly the same: both somewhat higher than 1 mA/cm 2 .…”

Section: Discussionmentioning

confidence: 98%

Molecular phosphorus ion source for semiconductor technology

Gushenets

Бугаев

Окс

et al. 2012

Review of Scientific Instruments

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This paper presents results on the generation of molecular phosphorus ion beams in a hot filament ion source. Solid red phosphorous is evaporated mainly as tetra-atomic molecules up to a temperature of 800°C. Thus, one of the main conditions for producing maximum P(4)(+) fraction in the beam is to keep the temperature of the phosphorous oven, the steam line and the discharge chamber walls no greater than 800°C. The prior version of our ion source was equipped with a discharge chamber cooling system. The modified source ensured a P(4)(+) ion beam current greater than 30% of the total beam current.

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Section: Discussionmentioning

confidence: 98%

Molecular phosphorus ion source for semiconductor technology

Gushenets

Бугаев

Окс

et al. 2012

Review of Scientific Instruments

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“…For n-type dopants molecular forms of arsenic and phosphorus (As 2+ , As 3+ , etc.) have also been examined [6]. The usefulness of these is less obvious since most benefit would be expected when replacing lower mass (sub-amorphizing) implants with molecules.…”

Section: Ecs Transactions 35 (2) 173-184 (2011)mentioning

confidence: 99%

(Invited) Recent Developments in Ion Implantation

Renau¹

2011

ECS Trans.

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The last few years have seen significant developments in ion implantation: Commercial implanters are now available with cryogenic capabilities to enable significant reductions in implant induced crystal damage; Plasma doping tools are now extensively used in fabs; Modified sources and new chemistries have been developed that allow some implants to be replaced by more exotic molecular implants to enable simultaneous co-implants and minimize end of range damage; Today's implanters give better dopant placement performance than ever before.These changes have been driven by CMOS scaling challenges, particularly at 32nm and 22nm, along with changes in thermal processing and the emergence of new implant applications.Details of some of these developments are given along with some explanation of the changes that have made them necessary.

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“…The use of polyatomic conglomerates or clusters (M n ) is promising because at a given accelerating voltage and at the same ion beam current density, for the cluster ions implanted dose rate increases in n 2 times compared to that for monatomic ions. 1 This may be connected to lower implanted energy per cluster atom and shorter the mean path of the ions in a target. a) Contributed paper, published as part of the Proceedings of the 15th…”

Section: Introductionmentioning

confidence: 99%

“…In the discharge chamber of an ion source under certain experimental conditions, the percentage of polyatomic phosphorus ions (P 2 , P 3 , P 4 ) in an ion beam can reach 80%. 1,2 The use of red phosphorus as a P 4 molecular vapor source involves a series of problems associated with multiphase nature of red phosphorus, its evaporation rate instability, thermodynamic instability (a possibility to transform from one allotropic state to another), and low evaporation kinetics. The foregoing factors considerably lengthen the time during which equilibrium vapor pressure is established over the heated phosphorus surface and result in unstable vapor supply to the discharge chamber of an ion source.…”

Section: Introductionmentioning

confidence: 99%

Gas feeding molecular phosphorous ion source for semiconductor implanters

Gushenets

Окс

Бугаев

et al. 2013

Review of Scientific Instruments

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Phosphorus is a much used dopant in semiconductor technology. Its vapors represent a rather stable tetratomic molecular compound and are produced from one of the most thermodynamically stable allotropic forms of phosphorus-red phosphorus. At vacuum heating temperatures ranging from 325 °C, red phosphorus evaporates solely as P4 molecules (P4/P2 ∼ 2 × 10(5), P4/P ∼ 10(21)). It is for this reason that red phosphorus is best suited as a source of polyatomic molecular ion beams. The paper reports on experimental research in the generation of polyatomic phosphorus ion beams with an alternative P vapor source for which a gaseous compound of phosphorus with hydrogen - phosphine - is used. The ion source is equipped with a specially designed dissociator in which phosphine heated to temperatures close to 700 °C decomposes into molecular hydrogen and phosphorus (P4) and then the reaction products are delivered through a vapor line to the discharge chamber. Experimental data are presented reflecting the influence of the discharge parameters and temperature of the dissociator heater on the mass-charge state of the ion beam.

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Universal Ion Source™ for Cluster and Monomer Implantation

Cited by 4 publications

References 0 publications

Molecular phosphorus ion source for semiconductor technology

Molecular phosphorus ion source for semiconductor technology

(Invited) Recent Developments in Ion Implantation

Gas feeding molecular phosphorous ion source for semiconductor implanters

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