SrNbO2N is a promising narrow‐bandgap semiconductor for sunlight‐driven water splitting but is generally subject to insufficient photocarrier separation and severe photocorrosion. Here, the targeted single‐crystalline SrNbO2N nanobelts are passivated by consecutive annealing in O2 and N2/NH4F to approach the right N/O ratio (1/2) and anion content (O + N = 60 at%). The passivation measures lead to both a low concentration (≈2.2 × 1015 cm−3) of defects including VO, Nb3+, Nb4+ for efficient photocarrier separation and unique fluorine‐rich, nitrogen‐poor surface with low surface energy for high stability against photocorrosion. Notably, the passivated SrNbO2N nanobelts deliver the highest values of photocurrent density of 4.5 mA cm−2 at 1.23 V versus RHE and stable photocatalytic (PC) Z‐scheme overall water splitting activity of ≈10 µmol h−1 H2 evolution under AM 1.5G illumination when used as photoanode materials for photoelectrochemical (PEC) water oxidation and the photocatalytic O2‐evolution moiety, respectively. These findings provide not only an effective guideline to upgrade the activity and stability of SrNbO2N but also fresh mechanistic insights into the role of passivation measures.