2024
DOI: 10.1021/acs.chemmater.4c02738
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Unlocking the Potential of 2D WTe2/ZrS2 van der Waals Heterostructures for Tunnel Field-Effect Transistors: Broken-Gap Band Alignment and Electric Field Effects

Konstantina Iordanidou,
Samuel Lara-Avila,
Sergey Kubatkin
et al.

Abstract: Heterostructures composed of two-dimensional materials open new avenues for advancing semiconductor technology, particularly in the development of energy-efficient tunnel field effect transistors (TFETs). Here, we employ density functional theory calculations to investigate the electronic behavior of WTe 2 /ZrS 2 heterostructures having diverse dimensions and arrangement motifs. Our simulations suggest that the topmost valence band of WTe 2 overlaps with the bottommost conduction band of ZrS 2 , giving rise to… Show more

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